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Excess Carrier Lifetimes in (HgCd)Te Grown by Mocvd Interdiftused Multilayer Process

  • P. Mitra (a1), T. R. Schimert (a1), Y. L. Tyan (a1), A. J. Brouns (a1) and F. C. Case (a1)...

Abstract

Transient lifetime measurements on p- and n-type Hg1-xCdxTe epitaxial films, grown by the MOCVD-interdiffused multilayer process (IMP) on CdTe and CdZnTe, are reported. Lifetimes have been measured on undoped n-type, vacancy and arsenic doped p-type (HgCd)Te for x-values of 0.20-0.28 over the 25K-300K temperature range. Lifetime characterization has been carried out primarily by non-contact transient millimeter wave reflectance as well as by standard photoconductive decay. It is shown that Auger limited lifetimes are achievable in undoped n-type material. N-type lifetime results are analyzed within the framework of a multilevel Shockley-Read model which provide insight into the nature and density of defect states in the material. In p-type (HgCd)Te, for the same carrier concentration, longer lifetimes are obtained by As-doping than in vacancy doped material.

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Excess Carrier Lifetimes in (HgCd)Te Grown by Mocvd Interdiftused Multilayer Process

  • P. Mitra (a1), T. R. Schimert (a1), Y. L. Tyan (a1), A. J. Brouns (a1) and F. C. Case (a1)...

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