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Evolution of Stress During Heteroepitaxial Growth of NiSi2 on (001) and (111) Silicon Substrates

Published online by Cambridge University Press:  28 February 2011

H. L. Ho ,
C. L. Bauer  and
S. Mahajan
H. L. Ho
Affiliation:
Department of Metallurgical Engineering and Materials Science Carnegie Mellon University, Pittsburgh, PA 15213
C. L. Bauer
Affiliation:
Department of Metallurgical Engineering and Materials Science Carnegie Mellon University, Pittsburgh, PA 15213
S. Mahajan
Affiliation:
Department of Metallurgical Engineering and Materials Science Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

Thin film stresses accompanying the nucleation and growth of NiSi2, resulting from the interaction of polycrystalline nickel films with (001) and (111) silicon substrates, have been measured at an annealing temperature of 825° C. Results Indicate a significantly larger stress reduction during the formation of NiSi2 on (111) silicon ( ~ 200 MPa) whereas the stress reduction is comparatively small (50–100 MPa) for the formation of NiSi2 on (001) silicon. TEM studies reveal that for NiSi2 on (111) silicon, two sets of dislocations in edge or mixed orientation are initially produced - one set consisting of Shockleys spaced 25Onm and a second set consisting of 5Onm spaced Shockleys; dislocations and their Burgers vector lie in the growth interface. For NiSi2 on (001) silicon, dislocations are rarely observed, however, a large concentration of ledges or facets are observed in an orthogonal network lying at the NiSi2 - (001)Si interface.

It is argued thai the observed stress reduction of NiSi2 on (111)Si is due to concurrent dislocation multiplication and interfacial glide of the Shockley partials. Larger compressive stresses of NiSi2 on (111) silicon at the annealing temperature is attributed to the accumulation of the edge type Shockleys present in the NiSi2 phase. In contrast, the negligible decrease in stress during the formation of NiSi2 on (001) silicon is believed to result from the presence of sessile misfit compensating ledges which lie at the NiSi2-Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 249
Copyright
Copyright © Materials Research Society 1990

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