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Evolution of Co/Ge Films on Si(100) and Ge(100) Substrates

Published online by Cambridge University Press:  15 February 2011

G.R. Carlow ,
T.D. Lowes ,
M. Grunwell  and
M. Zinke-Allmang
G.R. Carlow
Affiliation:
Department of Physics, University of Western Ontario London, Ontario, Canada N6A 3K7
T.D. Lowes
Affiliation:
Department of Physics, University of Western Ontario London, Ontario, Canada N6A 3K7
M. Grunwell
Affiliation:
Department of Physics, University of Western Ontario London, Ontario, Canada N6A 3K7
M. Zinke-Allmang
Affiliation:
Department of Physics, University of Western Ontario London, Ontario, Canada N6A 3K7
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Abstract

We present results on the evolution of Co/Ge films on Si(100) substrates. Room temperature deposition of 18 nm thick Ge films followed by 5 nm thick Co films was done by Molecular Beam Epitaxy (MBE) and then post-deposited annealing was done at 700 C. Using combinations of Scanning electron microscopy, Auger electron spectroscopy and Rutherford backscattering spectroscopy, we determine that the Co and Ge are clustering on the Si surface at these annealing temperatures. During the clustering, the Co is diffusing into the Si substrate leaving a Ge-rich clustered morphology. To test the effect of the Si substrate on the evolution of the films, Co films were deposited on Ge(100) substrates and annealed at 700 C. Clustered morphologies are seen on the Ge substrates and Co in-diffusion is also occurring. The morphologies on the Ge substrates are significantly different from those on the Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 419
Copyright
Copyright © Materials Research Society 1995

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References

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