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Evolution of Anisotropic Elastic Strains, and rf/Microwave Dielectric Properties of <110> Textured BST 60/40 Thin Films on <100> NdGaO3 Substrates

Published online by Cambridge University Press:  01 February 2011

W. K. Simon ,
E. K. Akdogan ,
J. A. Bellotti  and
A. Safari
W. K. Simon
Affiliation:
Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey 08854
E. K. Akdogan
Affiliation:
Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey 08854
J. A. Bellotti
Affiliation:
Navy Research Laboratory, Washington D.C., District of Columbia 20375.
A. Safari
Affiliation:
Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey 08854
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Abstract

Ba0.60Sr0.40TiO3 thin films were deposited on orthorhombic <100> oriented NdGaO3 substrates by pulsed-laser deposition. Film thickness ranged from 25 nm to 1200 nm. X-ray pole figures have shown consistent <110> textured films with good alignement to the substrate. X-ray strain analysis indicates up to 0.5% compressive strain along the (001) direction, and weaker tensile strain along (-110). Dislocation densities, as computed from strain data, were found to be in the range 5–6×105 cm-1 along both directions. The critical thickness for dislocation formation along (001) and (-110) were found to be 5 and 7 nm, respectively. Permittivity and tunability were investigated using interdigitated capacitors in the 45 MHz-20 GHz range. Dielectric properties and tunability in the <110> oriented films exhibited strong strain and directional properties. Tunability up to 54% was observed at moderate field levels (∼ 5 kV/mm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G5.6
Copyright
Copyright © Materials Research Society 2005

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