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Evidence of the De-multiplication Interactions Between Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates

  • Cheng-Liang Wang (a1) and Jyh-Rong Gong (a2)

Abstract

We report the observation of threading dislocation de-multiplication process by transmission electron microscopy (TEM). The GaN films used in this study were grown on (0001) sapphire substrates with LT-GaN buffer layers by reduced pressure organometallic vapor phase epitaxy. By using g · Db = 0 invisibility criterion, it was found that some of TDs were de-multiplicated by interactions among themselves. In particular, type a+c TDs were found to nucleate through the interactions between type a and type c TDs in GaN near the GaN/sapphire interface so that the de-multiplication of TDs in GaN films was achieved.

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[1] Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S. P. and Speck, J. S., J. Appl. Phys. 80 (1996) 3228.
[2] Gong, J. R., Tseng, S. F., Huang, C. W., Tsai, Y. L., Liao, W. T., Wang, C. L., Shi, B. H. and Lin, T. Y., Jpn. J. Appl. Phys. 42 (2003) 6823.
[3] Hijikuro, M., Kuwano, N., Takeuchi, M., and Aoyagi, Y., Phys. Stat. Sol. (c) 3 (2006) 1832.

Keywords

Evidence of the De-multiplication Interactions Between Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates

  • Cheng-Liang Wang (a1) and Jyh-Rong Gong (a2)

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