Hostname: page-component-788cddb947-tr9hg Total loading time: 0 Render date: 2024-10-19T03:42:27.105Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence of Defect Migration and Clustering in MeV Heavy Ion Damaged Silicon

Published online by Cambridge University Press:  10 February 2011

Y.N. Mohapatra  and
P.K. Girl
Y.N. Mohapatra
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, India - 208016
P.K. Girl
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, India - 208016
Get access

Abstract

We have studied electrically active defects created by MeV heavy ion implantation in n-silicon. The buried damaged layer, created by implanting Ar’ ions of energy 1.45 MeV and doses in the range 1013-1014 cm−2 at room temperature, is embedded within the depletion layer of a Schottky diode. The defects are characterized using capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS). Large concentration of electrically active defects are found to occur in a region several microns beyond the ion range or the damage profile predicted by Monte Carlo simulations. The dominance of a single trap in the damaged region is established from hysteresis effect in C-V, space charge limited conduction in forward I-V characteristics and DLTS results. With annealing in the temperature range of 400-600C, the observed changes in defect charge profile indicate that the effective electrical interface moves progressively towards the surface. C-V characteristics have been simulated using model charge profiles which suggest presence of a compensated region and a sharp negatively charged defect profile at a distance much larger than that expected from ion range. Our results constitute experimental evidence of migration and clustering of interstitial related defects, even at room temperature in case of high dose irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 403
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Borland, J. O. and Koelsch, R., Solid State Technol. 36, 28 (1993).Google Scholar
2. Chason, E., Picraux, S.T., Poate, J.M., Borland, J.O., Current, M.I., Diaz de la Rubia, T., Eglesham, D.J., Holland, O.W., Law, M.E., Magee, C.W., Mayer, J.W., Melngailis, J., and Tasch, A.F., J. Appl. Phys. 81, 6513 (1997).Google Scholar
3. Roorda, S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Dierker, S., Dennis, B. S., Eagleshman, D. J., Spaepen, F., and Fuoss, P., Phys. Rev. B 44, 3702 (1991).Google Scholar
4. Motooka, T., Harada, S., and Ishimaru, M., Phys. Rev. Lett. 78, 2980 (1997).Google Scholar
5. Coffa, S., Priolo, F., and Battaglia, A., Phys. Rev. Lett. 70, 3756 (1993).Google Scholar
6. Benton, J.L., Libertino, S., Kringhoj, P., Eaglesham, D.J., Poate, J.M., and Coffa, S., J. Appl. Phys. 82, 120 (1997).Google Scholar
7. Zeigler, J. F., Biersak, J. P., and Littmark, U., Stopping of Ions in Solids, Pergamon, New York, 1985.Google Scholar
8. Svensson, B. G., Mohadjeri, M., Hallen, A., Svensson, J.H., and Corbett, J. W., Phys. Rev. B 43, 2292, (1991).Google Scholar
9. Giri, P.K. and Mohapatra, Y.N., Appl. Phys. Lett. 71, 1682 (1997).Google Scholar
10. Lampert, M. A. and Mark, P., Current Injection in Solids, Academic, New York, 1970 Chap 2 and Chap 4.Google Scholar
11. Privitera, V., Coffa, S., Priolo, F., Larsen, K. K., and Mannino, G., Appl. Phys. Lett. 68, 3422 (1996).Google Scholar
12. Jaraiz, M., Gilmer, G.H., Poate, J. M., and de la Rubia, T.D., Appl. Phys. Lett. 68, 409 (1996).Google Scholar