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Evidence for Substitutional C, Ordering Effects and Interdiffusion in Epitaxial GE-C and GE-RICH GE-SI-C Alloys

Published online by Cambridge University Press:  10 February 2011

Bi-Ke Yang ,
W. H. Weber  and
M. Krishnamurthy
Bi-Ke Yang
Affiliation:
Department of Metallurgical and Materials Engineering, Michigan Technological University Houghton, MI 49931
W. H. Weber
Affiliation:
Physics Department, Ford Research Laboratories, Dearborn, MI 48121-2053
M. Krishnamurthy
Affiliation:
Department of Metallurgical and Materials Engineering, Michigan Technological University Houghton, MI 49931
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Abstract

We report on the epitaxial growth of Ge-C and Ge-Si-C alloys (C<10%) grown on Si(100) and Ge(100) substrates using low temperature (∼200°C) molecular beam epitaxy. Thin films (50–70 nm) were characterized in-situ by RHEED and ex-situ by transmission electron microscopy, xray diffraction, and Raman spectroscopy. The films were annealed at 750°C and 850°C in an Ar atmosphere to study interdiffusion effects.

Raman spectroscopy of Ge-C on Ge indicates the existence of a Ge-C local mode at 530cm−1 and is direct evidence for the presence of substitutional C in Ge. The GeSiC alloys grown on Ge do not show the Ge-C local mode, consistent with preferential Si-C bonding. There is evidence for strain enhanced solubility of C based on a comparison of the substitutional C content in Ge-C films on Si (∼1 at %) and on Ge substrates (∼0.1 at %). Silicon interdiffusion in annealed Ge-C samples is strongly suppressed by the presence of C. A simple diffusion model is used to illustrate Si indiffusion in Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 361
Copyright
Copyright © Materials Research Society 1998

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