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Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam

  • H. Kametani (a1), H. Akiyama (a1), Y. Yamaguchi (a1), M. Koumaru (a1), L. Wei (a2), Y. Tabuki (a2), S. Tanigawa (a2), A. Uedono (a3), S. Watauchi (a3), Y. Ujihira (a3), R. Suzuki (a4), H. Ohgaki (a4) and T. Mikado (a4)...

Abstract

Slow/monoenergetic positron beams and pulsed positron beams have been used as a non-destructive probe to investigate vacancy-type defects in SIMOX substrates which were formed by high - dose oxygen implantation and high-temperature annealing. To obtain depth profiles of vacancy-type defects, a positron beam in the 0–30keV energy range was used. Doppler broadened annihilation spectrum and positron lifetime were measured as a function of incident positron energy. These measurements show the following results; vacancy -type defects exist near the surface of the top silicon layer even if the specimen was analyzed as defect -free Silicon by XTEM, and in the case of the as-implanted specimen, cavities in diameter of about 50–200A are created in the top silicon layer and they include high pressure gases.

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Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam

  • H. Kametani (a1), H. Akiyama (a1), Y. Yamaguchi (a1), M. Koumaru (a1), L. Wei (a2), Y. Tabuki (a2), S. Tanigawa (a2), A. Uedono (a3), S. Watauchi (a3), Y. Ujihira (a3), R. Suzuki (a4), H. Ohgaki (a4) and T. Mikado (a4)...

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