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Evaluation of Ultra-thin Layer Fabricated by Wet-process as a Pore-Seal for Porous Low-k Films

Published online by Cambridge University Press:  29 July 2011

Shoko Sugiyama Ono ,
Kazuo Kohmura ,
Hirofumi Tanaka ,
Yasuhisa Kayaba  and
Takamaro Kikkawa
Shoko Sugiyama Ono
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Kazuo Kohmura
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Hirofumi Tanaka
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Yasuhisa Kayaba
Affiliation:
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Japan
Takamaro Kikkawa
Affiliation:
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Japan
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Abstract

We focused on detailed evaluations of properties of the ultra-thin pore-seal layer (< 3 nm-thick), such as Cu diffusion barrier property and thermal stability. Cu diffusion into dense thermal silica and porous silica low-k which are covered with the pore seal layer was evaluated using metal-insulator-semiconductor (MIS) capacitors under bias thermal stress (BTS). Triangular voltage sweep (TVS) measurement shows that the ultra-thin layer on dense thermal silica suppresses the drift of Cu ions. The Time-Dependent Dielectric Breakdown (TDDB) lifetime of porous silica low-k covered with the ultra-thin pore seal layer results in a drastic increase of the capacitor lifetime with respect to the no-pore-seal control system (stable at 125 °C at least for 10000 s). Thermal decomposition of bulk material of the pore sealant was measured by thermal gravity (TG) test in nitrogen. Bulk material did not decompose through around 350 °C. The amount of ultra-thin pore seal layer fabricated on silicon wafer after thermal cycle stress in vacuum was measured by x-ray photoelectron spectroscopy (XPS). Amount of pore sealant did not decrease even after 2 cycles of 20 min, at 250 °C. Those results show that the ultra-thin layer, which we propose here, has a potential as a pore seal layer for porous low-k films.

Keywords

barrier layerdielectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1335: Symposium O – Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics , 2011 , mrss11-1335-o02-04
Copyright
Copyright © Materials Research Society 2011

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References

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