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Evaluation of the Electromigration Performance of New Aluminium Via Plug-Fill Techniques for 0.25μm and 0.18μm Technologies

Published online by Cambridge University Press:  10 February 2011

S. Foley ,
N. Chan Tung ,
C. Gounelle ,
G. Wyborn ,
S. Louwers  and
A. Mathewson
S. Foley
Affiliation:
National Microelectronics Research Centre, University College – Lee Maltings, Prospect Row, Cork, Ireland. Tel: +353 21 904382Fax: +353 21 270271email: sfoley@nmrc.ucc.ie
N. Chan Tung
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
C. Gounelle
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
G. Wyborn
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
S. Louwers
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
A. Mathewson
Affiliation:
National Microelectronics Research Centre, University College – Lee Maltings, Prospect Row, Cork, Ireland. Tel: +353 21 904382Fax: +353 21 270271email: sfoley@nmrc.ucc.ie
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Abstract

The electromigration performance of samples fabricated with new Al via-filling techniques are studied and compared. The new techniques are (1) Hot Al mono-chamber and (2) CVD/PVD Al. Their electromigration performances are assessed over a range of stress conditions and compared with that of a standard W- etchback technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 305
Copyright
Copyright © Materials Research Society 1998

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References

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