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Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

  • Sing-Pin Tay (a1), J. P. Ellul (a1), Susan B. Hewitt (a1), N. G. Tarr (a1) and A. R. Boothroyd (a1)...

Abstract

A low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

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1. Sugii, T., Aoyama, T., Furumura, Y., and Ito, T., Proc. 1st Topical Symp. on Silicon Based Heterostructures, Iyer, S.S. et al., ed., Toronto, Canada, Oct 1990, pp. 124.
2. Hebert, F., IEEE Electron Device Lett., vol. EDL-12, no.9, pp.477 (1991).
3. Boeglin, H. J., United States Patent No. 5, 053, 255, Oct 1, 1991.
4. Leung, P. et al., private communication.
5. Shaffer, P. T., Naum, R. G., J. Opt. Soc. Amer., vol. 59, no. 1, pp. 1498 (1970)
6. Powell, J. A., J. Opt. Soc. Amer., vol. 62, no. 3, pp. 341 (1972)

Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

  • Sing-Pin Tay (a1), J. P. Ellul (a1), Susan B. Hewitt (a1), N. G. Tarr (a1) and A. R. Boothroyd (a1)...

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