Skip to main content Accessibility help

Evaluation of Microdefects in As-Grown Silicon Crystals

  • H. Takeno (a1), S. Ushio (a1) and T. Takenaka (a1)


Microdefects, revealed as ‘flow patterns’ by preferential etching using Secco's etchant, in as-grown silicon crystals have been investigated by means of a transmission electron microscopy and a preferential etching. In as-grown CZ crystals, grown at the pulling speeds of 0.4 or 1.4 mm/min, dislocation loops and clusters were observed with TEM. The dislocation loops in both crystals are interstitial type. From a thermal behavior of flow patterns by heat treatments, we confirmed that the defects revealed as flow patterns in CZ crystals do not have a similar nature of that in D-defect region of FZ crystals.



Hide All
[1] Foil, H. and Kolbesen, B. O., Appl. Phys. 8, 319 (1975)
[2] Petroff, P. M. and de Kock, A. J. R., J. Cryst. Growth. 30, 117 (1975)
[3] Roksnoer, P. J. and van den Boom, M. M. B., J. Cryst. Growth. 53, 563 (1981)
[4] Abe, T., Harada, H. and Chikawa, J., in Defect in Semi conductors II. edited by Mahajan, S. and Corbett, J. W. (Mater. Res. Soci., Pittsburgh PA 1982), pp. 117
[5] Kitano, T., Phys. Stat. Sol. (a) 127, 341 (1991)
[6] Sitnikova, A. A., Sorokin, L. M., Talanin, I. E., Sheikhet, E. G. and Falkevich, E. S., Phys. Stat. Sol. (a) 81. 433 (1984)
[7] de Kock, A. J. R. and van de Wijgert, W. M., J. Cryst. Growth. 49, 718 (1980)
[8] Yamagishi, H., Fusegawa, I., Fujimaki, N. and Katayama, M., Semicond. Sci. Technol. 2, A135 (1992)
[9] Abe, T. and, Kimura, M., in Semiconductor Silicon 1990 edited by Huff, H. R., Barraclough, K. G. and Chikawa, J. (Elecrochem. Soc, Pennington 1990) pp 105116
[10] Wijaranakula, W., J. Electrochem. Soc. 139, 604 (1992)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed