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EVALUATION OF MICROCRYSTALLINE SILICON FILMS DEPOSITED BY ULTRAFAST THERMAL PLASMA CVD

  • Yongkee Chae (a1), Hiromasa Ohno (a1), Keisuke Eguchi (a1) and Toyonobu Yoshida (a1)

Abstract

This research is the first attempt at applying thermal plasma chemical vapor deposition (TPCVD) for the ultrafast deposition of Si films for solar cells. A conventional deposition process of Si films, such as plasma-enhanced chemical vapor deposition (PECVD), is capable of a maximum deposition rate of approximately 5 Å/s and it takes a relatively long time to deposit an intrinsic layer. In this paper we report a novel ultrafast deposition approach using dc-rf hybrid TPCVD. The extreme improvement of stability, controllability, and cleanliness of the process enabled the deposition of microcrystalline Si films at the ultrafast rate of over 1000 nm/s, which is about 2000 times faster than that by conventional CVD. Moreover, a minimum defect density of 7.2×1016 cm−3was achieved by post-treatment of the film in 2 Torr H2/Ar plasma. Monte-Carlo simulation and step coverage analysis suggested that the precursor is an approximately 1 nm cluster with a sticking probability of about 0.6. The success of this research will lead to the development of commercially viable technology in a roll-to-roll system in the near future, and will fundamentally change the established concepts of Si deposition technology.

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EVALUATION OF MICROCRYSTALLINE SILICON FILMS DEPOSITED BY ULTRAFAST THERMAL PLASMA CVD

  • Yongkee Chae (a1), Hiromasa Ohno (a1), Keisuke Eguchi (a1) and Toyonobu Yoshida (a1)

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