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Evaluation of Copper Penetration in Low-κ Polymer Dielectrics by Bias-Temperature Stress

Published online by Cambridge University Press:  10 February 2011

Alvin L. S. Loke ,
S. Simon Wong ,
Niranjan A. Talwalkar ,
Jeffrey T. Wetzel ,
Paul H. Townsend ,
Tsuneaki Tanabe ,
Raymond N. Vrtis ,
Melvin P. Zussman  and
Devendra Kumar
Alvin L. S. Loke
Affiliation:
Center for Integrated Systems, Stanford University, CIS 202 MC 4070, Stanford, CA 94305, aloke @holst.stanford.edu Currently at Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304.
S. Simon Wong
Affiliation:
Center for Integrated Systems, Stanford University, CIS 202 MC 4070, Stanford, CA 94305, aloke @holst.stanford.edu
Niranjan A. Talwalkar
Affiliation:
Center for Integrated Systems, Stanford University, CIS 202 MC 4070, Stanford, CA 94305, aloke @holst.stanford.edu
Jeffrey T. Wetzel
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., 3501 Ed Bluestein Boulevard, Austin, TX 78721
Paul H. Townsend
Affiliation:
The Dow Chemical Company, 1712 Building, Midland, MI 48674
Tsuneaki Tanabe
Affiliation:
Central Technical Laboratory, Asahi Chemical Industry Company, 2–1, Samejima, Fuji, JAPAN
Raymond N. Vrtis
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Melvin P. Zussman
Affiliation:
HD MicroSystems, 334–127 Route 141 Murphy Road, Wilmington, DE 19880
Devendra Kumar
Affiliation:
Novellus Systems, 81 Vista Montana, San Jose, CA 95134
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Abstract

The industry is strongly interested in integrating low–κ dielectrics with Damascene copper. Otherwise, with conventional materials, interconnects cannot continue to scale without limiting circuit performance. Integration of copper wiring with silicon dioxide (oxide) requires barrier encapsulation since copper drifts readily in oxide. An important aspect of integrating copper wiring with low-K dielectrics is the drift behavior of copper ions in these dielectrics, which will directly impact the barrier requirements and hence integration complexity.

This work evaluates and compares the copper drift properties in six low-κ organic polymer dielectrics: parylene-F; benzocyclobutene; fluorinated polyimide; an aromatic hydrocarbon; and two varieties of poly(arylene ether). Copper/oxide/polymer/oxide/silicon capacitors are subjected to bias-temperature stress to accelerate penetration of copper from the gate electrode into the polymer. The oxide-sandwiched dielectric stack is used to overcome interface instabilities occurring when a low-κ dielectric is in direct contact with either the gate metal or silicon substrate. The copper drift rates in the various polymers are estimated by electrical techniques, including capacitance- voltage, current-voltage, and current-time measurements. Results correlate well with timeto- breakdown obtained by stressing the capacitor dielectrics. Our study shows that copper ions drift readily into fluorinated polyimide and poly(arylene ether), more slowly into parylene-F, and even more slowly into benzocyclobutene. A qualitative comparison of the chemical structures of the polymers suggests that copper drift in these polymers may possibly be retarded by increased crosslinking and enhanced by polarity in the polymer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 535
Copyright
Copyright © Materials Research Society 1999

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