Hostname: page-component-7bb8b95d7b-l4ctd Total loading time: 0 Render date: 2024-09-25T18:32:36.695Z Has data issue: false hasContentIssue false

Evaluation of a vertical tube concept for RTP

Published online by Cambridge University Press:  21 February 2011

Byung-Jin Cho
Affiliation:
IMEC Kapeldreef 75, B-3001, Leuven, Belgium
Peter Vandenabeele
Affiliation:
IMEC Kapeldreef 75, B-3001, Leuven, Belgium
Karen Maex
Affiliation:
IMEC Kapeldreef 75, B-3001, Leuven, Belgium
Get access

Abstract

A new RTP system concept is proposed and demonstrated. The system uses a vertical cylindrical quartz tube, while the wafer is placed horizontally. Linear halogen lamps are arranged in an hexagonal shape. Optimal power control results in a temperature difference within ±1.5 °C over a 6 inch wafer in steady state. Oxidation under optimal conditions results in a 1.37% standard deviation for an average oxide thickness of 110.4 Å. The temperature nonuniformity during the transient has been greatly improved by using dynamic control. The main advantages of this new system concept are its excellent temperature uniformity and the good accessibility of the wafer for technological treatments and in situ measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Norman, S. A., “Optimization of wafer temperature uniformity in rapid thermal processing systems,” ISL Technical Report No. 91-SAN-l, Stanford Univ.,Stanford, CA, 1991.Google Scholar
[2] Moslehi, M. M. et al. , “In-situ fabrication and process control techniques in rapid thermal processing,” Mat. Res. Soc. Symp. Proc., vol. 224, p. 143, 1991.CrossRefGoogle Scholar
[3] Apte, P. P. and Saraswat, K. C., “Rapid thermal processing uniformity using multivariable control of a circularly symmetric 3 zone lamp,” IEEE Trans. Semicond. Manufact., vol. 5, no. 3, p. 180, 1992.Google Scholar
[4] Roozeboom, F., “Temperature control and system design aspects in rapid thermal processing,” Mat. Res. Soc. Syrp. Proc., vol. 224, p. 9, 1991.CrossRefGoogle Scholar
[5] Vandenabeele, P. and Maex, K., “Temperature control and temperature uniformity during rapid thermal processing,” Mat. Res. Soc. Symp. Proc., vol. 224, p. 185, 1991.Google Scholar