A new RTP system concept is proposed and demonstrated. The system uses a vertical cylindrical quartz tube, while the wafer is placed horizontally. Linear halogen lamps are arranged in an hexagonal shape. Optimal power control results in a temperature difference within ±1.5 °C over a 6 inch wafer in steady state. Oxidation under optimal conditions results in a 1.37% standard deviation for an average oxide thickness of 110.4 Å. The temperature nonuniformity during the transient has been greatly improved by using dynamic control. The main advantages of this new system concept are its excellent temperature uniformity and the good accessibility of the wafer for technological treatments and in situ measurements.
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