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Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films

  • Y. Lu (a1), H. C. Kuo (a1), C. H. Lin (a1), H. Shen (a2), F. Ren (a3), M. Wraback (a2), J. Pamulapati (a2), M. Taysing-Lara (a2), M. Dutta (a2) and J. M. Kuo (a3)...

Abstract

We present a process for creating in-plane anisotropic strain in (100) GaAs and GaAs/AlGaAs multiple quantum well (MQW) thin films. The host substrates used for bonding include (100) GaAs, (100) silicon, and lithium tantalate (LiTaO3) with a special crystalline orientation. A mutilayer metallization consisting of Au-Sn (Au: 80 wt% , Sn: 20 wt%, 0.95μm), Ti (500Å) adhesion layer and Pt (500Å) barrier layer is deposited on the thin films and the host substrates. By choosing a proper annealing temperature (380°C) and thickness of eutectic layer, the thin films and the substrates are bonded together. Photoluminescence measurements do not reveal any thermally induced strain in the thin films bonded to GaAs; however, they show the existence of in-plane biaxial strain in the films bonded on Si. Linearly polarized reflectance measurements reveal an optical anisotropy in the MQW bonded to LiTaO3, which possesses an orientation-dependent thermal expansion. This indicates that the in-plane strain in the thin films is induced by the different thermal expansions between the thin films and the substrates. This process can be used to develop a new class of devices with an artificially induced in-plane strain.

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1 Shen, H., Wraback, M., Pamulapati, J., Dutta, M., Newman, P. G., Lu, Y., and Kuo, H.C., Phys. Rev. B, 47, 13933(1993).
2 Shen, H., Wraback, M., Pamulapati, J., Dutta, M., Newman, P. G., Ballato, A. and Lu, Y., Appl. Phys. Lett. 62, 2908(1993).
3 Shen, H., Pamulapati, J., Wraback, M., Taysing-Lara, M., Newman, P. G. and Dutta, M., Kuo, H.C., Lu, Y., to be published in IEEE Photonics Technol. Lett.(1994)
4 Lu, Y., Kuo, H.C., Shen, H., Wraback, M., Pamulapati, J., Dutta, M., Kosinski, J. and Sack, R., Materials Research Society Proceedings, 300, 537 (1993).
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Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films

  • Y. Lu (a1), H. C. Kuo (a1), C. H. Lin (a1), H. Shen (a2), F. Ren (a3), M. Wraback (a2), J. Pamulapati (a2), M. Taysing-Lara (a2), M. Dutta (a2) and J. M. Kuo (a3)...

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