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Europium doped CaF2 as a materials system for blue‐violet light emitting structures on Silicon

Published online by Cambridge University Press:  10 February 2011

T. Chatterjee ,
C. Michellon ,
P. J. McCann  and
X. M. Fang
T. Chatterjee
Affiliation:
Department of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman.
C. Michellon
Affiliation:
Centre Universitaire des Sciences et Techniques (C. U. S. T.), Blaise Pascal University, Clermont‐FerrandFrance.
P. J. McCann
Affiliation:
Department of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman.
X. M. Fang
Affiliation:
Department of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman.
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Abstract

The electrical and optical properties of MBE grown Europium doped CaF2 layers onp‐ type Silicon (100) substrates reveal the possibility of using this materials system to fabricate light emitters on silicon. Low temperature MBE growth of the Eu:CaF2 layers permits the incorporation of up to 7.48 atomic weight % Eu in the epilayer without causing significant degradation of the layer ciystallinity. Strong room temperature photoluminescence in the blue‐violet spectral range has been observed in these samples, without any luminescence quenching even when the Eu concentration in the CaF2 epilayer is as high as 7.48 atomic weight percent. The current versus voltage data reveal that high current densities can be sustained through the Eu:CaF2 epilayers without causing catastrophic failure of the dielectric layer. Visible DC electroluminescence (EL) is observed by injecting electrons into Eu2+ doped CaF2 layers. High current densities up to ~50A/cm2 have been sustained through these materials with a DC bias of ~30 volts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 423
Copyright
Copyright © Materials Research Society 1997

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