Skip to main content Accessibility help
×
Home

Erbium-Doped Silicon Prepared by UHV/CVD

  • David B. Beach (a1), Reuben T. Collins (a1), Francoise K. Legoues (a1) and Jack O. Chu (a1)

Abstract

Erbium-doped silicon has been prepared using Ultra High Vacuum/Chemical Vapor Deposition (UHV/CVD). An erbium mctalorganic compound, tris-1,1,1,5,5,5-hexafluoro-2,4-pentanedionato erbium (111) (Er(HFAC)3), was used as the erbium source and silane was used as the silicon source. Films were deposited at 650 °C at a total pressure of 1 mtorr. Erbium concentrations between 8×1019 and 1×1018 Er atoms/cm3 were prepared by varying the Er source reservoir temperature. Low temperature photoluminescence measurements showed strong emission at 1.54μm. The films are single crystal, but with a high concentration of threading defects.

Copyright

References

Hide All
1. Schmulovich, J., Wong, A., Wong, Y. H., Becker, P. C., Bruce, A. J., and Adar, R., Electron. Lett. 28, 1181 (1992).
2. Ennen, H., Schneider, J., Pomrenke, G., and Axmann, A., Appl. Phys. Lett. 43, 943 (1983).
3. Benton, J. L., Michel, J., Kimerling, L. C., Jacobsen, D. C., Xie, Y.-H., Eaglesham, D. J., Fitzgerald, E. A. and Poate, J. M., J. Appl. Phys. 70, 2667 (1991).
4. Ennen, H., Pomrenke, G., Axmann, A., Eisele, K., Haydl, W., and Schneider, J., Appl. Phys. Lett. 46, 381 (1985).
5. Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y.H., Poate, J. M., and Kimerling, L. C., J. Appl. Phys. 70, 2672 (1991).
6. Eaglesham, D. J., Michel, J., Fitzgerald, E. A., Jacobsen, D. C., Poate, J. M., Benton, J. L., Polman, A., Xie, Y.-H., and Kimerling, L. C., Appl. Phys. Lett. 58, 2797 (1991).
7. Xie, Y. H., Fitzgerald, E. A., and Mii, Y. J., J. Appl. Phys. 70, 3223 (1991).
8. Meyerson, B. S., Appl. Phys. Lett. 48, 797 (1986).
9. Meyerson, B. S., LcGoues, F. K., Nguyen, T. N., and Harame, D. L., Appl. Phys. Lett. 50, 113 (1987).
10. Uwai, K., Nakagome, H., and Takahei, K., J. Crystal Growth 93, 583 (1988).
11. Weber, J., Moser, M., Stapor, A., Scholz, F., Bohnert, G., Hangleiter, A., Hammel, A., Wiedmann, D., and Weidlein, J., J. Crystal Growth 104, 815 (1990).
12. Weber, A., Suhr, H., Schumann, H., and Kohn, R. D., Appl. Phys. A 51, 520 (1990).
13. Takemoto, J. H., Jackson, C. M., Manasevit, H. M., John, D. C. St., Burch, J. F., Daly, K. P., and Simon, R. W., Appl. Phys. Lett. 58, 1109 (1991).
14. Cowher, M. E., and Sedgwick, T. O., J. Crystal Growth 46, 399 (1979).
15. Berg, E. W. and Acosta, J. J., Anal. Chim. Acta 40, 101 (1968).
16. Morris, M. L., Mosher, R. W., and Sievers, R. E., in Inorganic Syntheses, Vol. IX (McGraw Hill, NY, 1967), p. 28.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed