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“Equilibrium Oxide” Features of the SIMOX Process

Published online by Cambridge University Press:  28 February 2011

H. H. Hosack ,
J. Hollingsworth ,
M. K. El-Ghor  and
K. A. Joyner
H. H. Hosack
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
J. Hollingsworth
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
M. K. El-Ghor
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
K. A. Joyner
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
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Abstract

The equilibrium configuration produced when the SIMOX process is carried to the extreme of complete conversion of the silicon film to oxide is described. The thickness of the “equilibrium oxide” produced is modelled using a joined Gaussian approximation to the oxygen implant profile. The “equilibrium oxide” for a 190KeV implant is investigated. This material is found to have a thickness of approximately 5400 angstroms, and to be a very homogeneous film with essentially stoichiometric SiO2 composition. The implications of this work for use of oxides in patterned SIMOX are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 159
Copyright
Copyright © Materials Research Society 1992

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References

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(3) Gibbons, J. F. and Mylroie, S., “Estimation of impurity profiles in ion implanted amorphous targets using joined half-Gaussian distributions”, Appl. Phys. Lett., Vol. 22, No. 11, 1 June 1973.CrossRefGoogle Scholar