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Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

Published online by Cambridge University Press:  11 February 2011

E. Ertekin ,
P.A. Greaney ,
T. D. Sands  and
D. C. Chrzan
E. Ertekin
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California
P.A. Greaney
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California
T. D. Sands
Affiliation:
School of Materials EngineeringSchool of Electrical & Computer Engineering and the Birck Nanotechnology Center, Purdue University
D. C. Chrzan
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California
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Abstract

The quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F10.4
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Wu, Y., Fan, R., and Yang, P., Nanolett 2, 83 (2002).Google Scholar
Bjork, M., Ohlsson, B., Sass, T., Persson, A., Thelander, C., Magnusson, M., Deppert, K., Wallenberg, L., and Samuelson, L., Nano. Letters 2, 87 (2002).Google Scholar
[3] Wagner, R. and Ellis, W., Appl. Phys. Lett. 4, 89 (1964).Google Scholar
[4] Wagner, R., Whisker Technology (Wiley, New York, 1970), p. 47.Google Scholar
[5] Yang, P., Wu, Y., and Fan, R.. Int. J. Nano. 1, 1 (2002).Google Scholar
[6] Haraguchi, K., Katsuyama, T., and Hiruma, K., J. Appl. Phys. 75, 4220 (1994).Google Scholar
[7] Markowitz, P., Zach, M., Gibbons, P., Penner, R., and Buhro, W., J. Am. Chem. Soc. 123, 4502 (2001)Google Scholar
[8] Kovtyukhova, N., Martin, B., Mbindyo, J., Smith, P., Pazavi, B., Mayer, T., and Mallouk, T., J. Phys. Chem. B. 105, 8762 (2001)Google Scholar
[9] Matthews, J. and Blakeslee, A., J. Vac. Sci. Technol. 12 (1975).Google Scholar
[10] Matthews, J. and Blakeslee, A., J. Cryst. Growth 27, 118 (1974).Google Scholar
[11] Johnson, H.T. and Freund, L.B.. J. Appl. Phys. 81, 9 (1997)Google Scholar
[12] Liu, X. H., Ross, F. M., and Schwarz, K.W.. Phys. Rev. Lett. 85, 19 (2000).Google Scholar
[13] Hirth, J. and Lothe, J., Theory of Dislocations (Krieger Publishing Company, Malabar, Florida, 1992), 2nd ed. Google Scholar
[14] Raiteri, P. and Miglio, L., Phys. Rev. B 66, 235408 (2002).Google Scholar