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EPR Investigation of Defects in Boron Nitride thin Films

Published online by Cambridge University Press:  25 February 2011

M. Fanciulli  and
T. D. Moustakas
M. Fanciulli
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
T. D. Moustakas
Affiliation:
Department of Electrical Engineering and Department of Physics, Boston University, Boston MA 02215.
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Abstract

Defects in BN thin films, produced by reactive sputtering, were investigated by Electron Paramagnetic Resonance (EPR) measurements. The EPR signals of films produced with up to 10% N2 in the argon discharge are consistent with films having a cubic structure, and becoming more ordered with nitrogen incorporation in the films. The concentration of spins is in the order of 1019 spins/g and they are attributed to nitrogen vacancies with an electron trapped in. Carbon incorporation changes the EPR signal and increases the concentration of spins significantly. This result is consistent with the notion that carbon doping stabilizes the electron in a nitrogen vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 605
Copyright
Copyright © Materials Research Society 1992

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References

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