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Epitaxy of YBa2Cu3O7-xon Silicon on Sapphire: Possibilities and Limits
Published online by Cambridge University Press: 15 February 2011
Abstract
We present investigations of YBa2Cu3O7-x, thin films deposited on Silicon on Sapphire (SoS) substrates by pulsed laser deposition and dc sputtering. A compound buffer system consisting of YSZ and CeO2 is used for improved YBa2Cu3O7-x growth characteristics. The critical thickness of YBa2Cu3O7-x on CeO2/YSZ/SoS is determined to be 280 nm.
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- Copyright © Materials Research Society 1994
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