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Epitaxy of SimGen Atomic Layer Superlattices

Published online by Cambridge University Press:  28 February 2011

J.-M. Baribeau ,
DJ. Lockwood ,
N.L. Rowell ,
M.W.C. Dharma-Wardana ,
D.C. Houghton  and
Song Kechang
J.-M. Baribeau
Affiliation:
Division of Physics, National Research Council Canada, Ottawa, K1A OR6, CANADA.
DJ. Lockwood
Affiliation:
Division of Physics, National Research Council Canada, Ottawa, K1A OR6, CANADA.
N.L. Rowell
Affiliation:
Division of Physics, National Research Council Canada, Ottawa, K1A OR6, CANADA.
M.W.C. Dharma-Wardana
Affiliation:
Division of Physics, National Research Council Canada, Ottawa, K1A OR6, CANADA.
D.C. Houghton
Affiliation:
Division of Physics, National Research Council Canada, Ottawa, K1A OR6, CANADA.
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Abstract

We report the MBE growth of various (SimGen)p atomic layer superlattices (ALS) and their characterization by Raman scattering spectroscopy, x-ray diffraction and photoluminescence. The structural properties of ALS prepared on (100) Si, (100) Ge and on various Si1-xGex (0.5<×<1) buffers were compared. Phonon peaks due to folding of acoustic modes were seen by Raman scattering spectroscopy in the frequency range 15-250 cm-1. The observed Raman spectra from the ALS were interpreted on the basis of a theoretical analysis of these systems. The study provided an estimation of the interfacial sharpness of the ALS. The photoluminescence investigation on annealed specimens revealed features between 800 and 900 meV that were ascribed to known dislocation lines in Si. No strong luminescent signal that could be unambiguously related to a direct bandgap behavior was detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 95
Copyright
Copyright © Materials Research Society 1990

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References

1Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy, (The Electrochemical Society, Pennington NJ), Eds Bean, J.C. and Schowalter, L.J., 1988.Google Scholar
2Froyen, S., Wood, D.M., Zunger, A., Phys. Rev. B 36 (1987) 4547, Phys. Rev. B 37, 6893 (1988).Google Scholar
3Bevk, J., Mannaerts, J.P., Feldman, L.C., Davidson, B.A. and Ourmazd, A., Appl. Phys. Lett. 49 286 (1986).Google Scholar
4Pearsall, T.P., Phys. Rev. Lett. 58, 729 (1986).Google Scholar
5Abstreiter, G., J. Cryst. Growth 95, 431 (1989).Google Scholar
6Okumura, H., Miki, K., Misawa, S., Sakamoto, K., Sakamoto, T. and Yoshida, S., in Extented Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989, pp 557–778.Google Scholar
7Baribeau, J.M., Jackman, T.E., Maigné, P., Houghton, D.C. and Denhoff, M.W., J. Vac. Sci. Technol. A 5, 1898 (1987).Google Scholar
8Dharma-wardana, M.W.C., Aers, G.C., Lockwood, D J. and Baribeau, J.M., to be published.Google Scholar
9Baribeau, J.-M., Lockwood, D.J., Dharma-wardana, M.W.C., Rowell, N.L. and McCaffrey, J.P., J. Cryst. Growth, in press.Google Scholar
10Pennycook, S.J., EMS A Bulletin 19:1, 67 (1989).Google Scholar
11Pennycook, S.J., Baribeau, J.-M. and Lockwood, D.J., unpublished.Google Scholar
12Lockwood, D.J., Baribeau, J.M., Timbrell, P.Y. and McCaffrey, J., J. Appl. Phys. 65, 3048 (1989).Google Scholar
13Davies, G., Phys. Rep 176, 83 (1989).Google Scholar
14Duncan, W.M. and Eastwood, M.L., Proc. SPIE 822, 172 (1987).Google Scholar