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Epitaxy of Arsenic-Pressure-Controlled MBE-Grown GaAs Layers

  • Y.H. Wang (a1), W.C. Liu (a1), C.Y. Chang (a1), M.S. Jean (a1) and S.A. Liao (a1)...

Abstract

Surface morphologies of the molecular beam epitaxy (MBE)-grown GaAs layers using the background-arsenic-pressure-control method were investigated. The growth parameters, such as substrate temperature, growth rate, epilayer thickness, As/Ga ratio, doping concentration, substrate type, etc., are related to the observed oval defect density. Protrusions and Ga-droplets caused oval defects during growth. The origin of the oval defects in our system is found to be the gallium oxide, not Ga "spitting" from the effusion cell.

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