Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-19T19:49:10.644Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxy Development in thin Superconducting YBa2Cu3O7 Films

Published online by Cambridge University Press:  21 February 2011

A. Yen ,
L. Li ,
J. D. Klein ,
W. B. Nowak  and
S. F. Cogan
A. Yen
Affiliation:
EIC Laboratories, Inc., Norwood, Massachusetts 02062
L. Li
Affiliation:
Northeastern University, Boston, Massachusetts 02115
J. D. Klein
Affiliation:
EIC Laboratories, Inc., Norwood, Massachusetts 02062
W. B. Nowak
Affiliation:
Northeastern University, Boston, Massachusetts 02115
S. F. Cogan
Affiliation:
EIC Laboratories, Inc., Norwood, Massachusetts 02062
Get access

Abstract

Ultrathin superconducting YBa2Cu3O7, films were grown on (100) YSZ (yttria-stabilized-zirconia) substrates by off-axis if magnetron sputtering at a relatively high deposition rate. The structure, orientation, and morphology of the films were examined by x-ray diffraction, reflection high-energy electron diffraction (RHEED), and scanning electron microscopy. X-ray diffraction patterns of films deposited on YSZ substrates exhibited strong c-axis alignment with the YBa2Cu3O7 peaks sharpening as the film thickness was increased. The degree of epitaxy apparent in RHEED photographs was found to increase dramatically as the film thickness was increased from 12 nm to 108 nm. This behavior is attributed to a nucleation and growth process in which epitaxy develops as a result of a 3 stage progression from a random to an oriented film.

The films were in-situ superconducting, exhibiting superconducting transition temperatures, Tc(0)'s, of 80 K for a 12 nm film and 88 K for a 280 nm film. However, the relatively low critical current densities (Jc < 1 × 106 A/cm2) at 77 K are probably due to a lack of in-plane epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 547
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dimos, D., Chandhari, P., and Mannhart, J., Phys. Rev. B 1, 4038 (1990).CrossRefGoogle Scholar
2. Garrison, S. M., Newman, N., Cole, B. F., Char, K., and Barton, R. W., Appl. Phys. Lett. 58, 2168 (1991).CrossRefGoogle Scholar
3. Gavaler, J.R., Tavacchio, J., Braggins, T.T., Forrester, M.G., and Greggi, J., J. Appl. Phys. 70 4383 (1991).CrossRefGoogle Scholar
4. Gao, J., Hauser, B., and Rogalla, H., J. Appl. Phys. 67(5). 2512 (1990).CrossRefGoogle Scholar
5. Zheng, J. Q., Wang, X. K., Shih, M. C., Williams, S., So, J., Lee, S. J., Dutta, P., Chang, R. P. H., and Ketterson, J. B., Appl. Phys. Lett. 58, 2303 (1991).CrossRefGoogle Scholar
6. Shimizu, Takashi, Nonaka, Hidehiko, and Arai, Kazuo, Appl. Phys. Lett. 52, 600 (1991).CrossRefGoogle Scholar
7. Krebs, H. U. and Krauns, Ch., Yang, X., and Geyer, U., Appl. Phys. Lett. 52, 2180 (1991).CrossRefGoogle Scholar
8. Eom, C.B., Sun, J.Z., Yamamoto, K., Marshall, A.F., Luther, K.E., Geballe, T.H., and Laderman, S.S., Appl. Phys. Lett. 55, 595 (1989).CrossRefGoogle Scholar
9. Eckertova, L., Physics of thin films, 2nd edition, p177 (Plenum Press, New York, 1986).Google Scholar
10. Francombe, M. H., in Epitaxial Growth, Part A, edited by Matthews, J. W. (Academic, New York, 1975), Chap. 2.5.Google Scholar
11. Xi, X. X., Geerk, J., Linker, G., Li, Q., and Meyer, O., Appl. Phys. Lett. 54, 2367 (1989).CrossRefGoogle Scholar
12. Li, Q., Meyer, O., Xi, X. X., Geerk, J., and Linker, G., Appl. Phys. Lett. 55, 1792 (1989).CrossRefGoogle Scholar
13. Hwang, D. M., Ying, Q. Y. and Kwok, H. S., Appl. Phys. Lett. 58, 2429 (1991).CrossRefGoogle Scholar