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Epitaxy and Magnetotransport Properties of La0.8Sr0.2MnO3 Films Synthesized by Both Pulsed Laser Deposition and Novel Chemical Routes

Published online by Cambridge University Press:  15 February 2011

A. R. Modak  and
Kannan M. Krishnan
A. R. Modak
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Kannan M. Krishnan*
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
*
*To whom all future correspondence should be addresed
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Abstract

La0.8Sr0.2 MnO3 thin films with different microstructural characteristics were prepared by both pulsed laser deposition and a novel polymeric sol-gel process. For both techniques, polycrystalline films were obtained on Si(100) with a native oxide surface but epitaxial and highly oriented growth could be induced on lattice-matched LaAlO3(100) substrates. Whilst the overall magnetization and magnetoresistance behavior as a function of temperature and applied field were consistent with recent results, i.e. a semiconductor-to-metal transition accompanied by an antiferromagnetic-to-ferromagnetic transformation and large magnetoresistance at the resistance peak temperature, the properties of the films were significantly different depending on the microstructure, epitaxy and polycrystallinity. Detailed microstructural characterization of the films are presented and correlated with their magnetic/magnetotransport properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 443
Copyright
Copyright © Materials Research Society 1996

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References

1. Chahara, K., Ohno, T., Kasai, M. and Kozono, Y., Appl. Phys. Lett 63, 1990 (1993).Google Scholar
2. Helmolt, R. von, Wecker, J., Holzapfel, B., Schultz, L. and Samwer, K., Phy. Rev. Lett. 71, 2331 (1993).Google Scholar
3. Jin, S., McCormack, M., Tiefel, T. H. and Ramesh, R., J. Appl. Phys. 76, 6929 (1994).Google Scholar
4. Refer to Proceedings of the 50th MMM Conference, Philadelphia, PA, November 1995.Google Scholar
5. Modak, A. R. and Krishnan, Kannan M., J. Amer. Ceram. Soc., 1995, In Press.Google Scholar
6. Krishnan, Kannan M., Modak, A. R., Lucas, C. A., Michel, R. and Cherry, H. B., J. Appl. Phys., 1995, In Press.Google Scholar
7. Modak, A. R. and Dey, S. K., Integrated Ferroelectrics 5, 321 (1994).Google Scholar