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Epitaxial Waveguiding KNbO3 Thin Films Grown By RF-Sputter Deposition

Published online by Cambridge University Press:  15 February 2011

Silvia Schwyn Thöny
Silvia Schwyn Thöny*
Affiliation:
Solid State Laboratory, Stanford University, Stanford, CA, 94305
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Abstract

The physical and optical properties of KNbO3 layers grown on (001) oriented spinel and MgO substrates by planar rf-sputter deposition were studied. Rutherford Backscattering measurements showed that stoichiometric films could be obtained by using K2CO3 enriched targets and 100% argon as a sputtering gas. The x-ray diffraction spectra showed that single crystalline tetragonal films could be obtained at temperatures in the range of 580–610°C. Furthermore, channelling experiments indicated good crystal quality with a χmin of 40%. High resolution Transmission Electron Microscopy of the films revealed epitaxial growth, but also domains with a typical width of 10–20 nm. Moreover, it was possible to excite waveguide modes with losses of only 1.1 dB/cm at λ = 632.8 nm. The nonlinear optical coefficient d31 was determined by the Maker-fringe technique using the 1.06 μm Nd:YAG laser fundamental wavelength. This yielded a d31 value of 5 pm/V. The electro-optic properties was investigated by phase modulation technique in a Michelson interferometer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 253
Copyright
Copyright © Materials Research Society 1994

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