Skip to main content Accessibility help

Epitaxial Structures For Optical Information Processing Applications: Superlattice Infrared Detectors

  • Moses T. Asom (a1)


Advances in epitaxial growth techniques such as molecular beam epitaxy and metal organic chemical vapor deposition have facilitated the formation of high quality III-V heterostructures with dimensional control down to atomic levels, with abrupt doping and near-defect-free interfaces. The flexibility and remarkable control offered by these techniques have resulted in the fabrication of new devices based on confinement or modulation of carriers in thin III-V heterostructures. Quantum wells and superlattice based devices are expected to be utilized in optical information processing as sources, modulators, and detectors. In this paper, we will review the general epitaxial requirements for quantum wells and superlattices based devices, and discuss the fabrication and properties of a new class of infrared photodetectors that employ intraband transitions in quantum wells.



Hide All
[1] Parker, E.H. Ed. The technology and physics of molecular beam epitaxy, (Plenum Press, New York, 1985).
[2] Mendez, E.E. and Klitzing, K. von Ed. Physics and applications of Quantum Wells and Superlattices, (Plenum Press, New York, 1987).
[3] Jewell, J.L., Lee, Y.H., Scherer, A., McCall, S.L., Olsson, N.A., Harbison, J.P., and Florez, L.T., Opt. Eng., 29, 210 (1990).
[4] Lee, Y.H., Tell, B., Brown-Goebeler, K.F., Jewell, J.L., Leibenguth, R.E., Asom, M.T., Livescu, G., Luther, L. and Mattera, V.D., Electron Lett., 26, 1308 (1990).
[5] Miller, D.A.B., Chelma, D.S., Damen, T.C., Wood, T.H., Burrus, C.A., Gossard, A.C. and Wiegmann, W., IEEE Journ. of Quant. Electr 21, 1462 (1985).
[6] Capasso, F., in Gallium Arsenide Technology Ed. Ferry, D.K. (Sams, Indianpolis, 1985).
[7] Levine, B.F., Bethea, C.G., Choi, K.K., Walker, J., and Malik, R.J., J. Appl. Phys. 64, 1591 (1988).
[8] Harris, J.J., Joyce, B.A. and Dobson, P.J., Surface Sci. 103,L90 (1981).
[9] Tsui, R.K., Kramer, G.D., Curless, J.A. and Peffley, M.S., Appl. Phys. Lett., 48, 940(1986).
[10] Wang, Y.H., Tai, K., Hsieh, Y.F., Chu, S.N.G., Wynn, J.D. and Cho, A.Y., Appl. Phys. Lett 57, 1613(1990).
[11] Chand, N. and Chu, S.N.G., Appl. Phys. Lett. 57,1796(1990).
[12] Alexandre, F., Goldstein, L., Leroux, G., Joncour, M.C., Thibierge, H. and Rao, E.V.K., J.Vac. Sci. Technol. B 3, 950(1985).
[13] Petroff, P.M., Miller, R.C., Gossard, A.C. and Wiegmann, W. Appl. Phys. Lett. 44, 217(1984).
[14] Asom, M.T., Geva, M., Leibenguth, R.E. and Chu, S.N. G, Appl. Phys. Lett. (1991).
[15] Levine, B.F., Malik, R.J., Walker, J., Choi, K.K., Bethea, C.G., Klienman, D.A. and Vendenberg, J.M., Appl. Phys. Lett. 50,273(1987).
[16] Goossen, K.W. and Lyon, S.A., J. Appl. Phys. 63,5149(1988).
[17] Coon, D.D. and Karunasiri, R.P.G., Appl. Phys. Lett. 45,649(1984)
[18] Lyon, S.A., Surface Science 228,508(1990).
[19] Smith, J.S., Chiu, L.C., Magalit, S., and Yariv, Y., J.Vac. Sci.Tech.B 12,376(1983).
[20] West, L.C. and Eglash, S.J., Appl. Phys. Lett. 46,1156(1985).
[21] Aondo, T., Fowler, A.B. and Stem, F., Rev. Mod. Phys. 54 (1982) 337.
[22] Levine, B.F., Bethea, C.G., Hasnain, G., Walker, J. and Malik, R.J., Appl. Phys. Lett. 53,296(1988).
[23] Kastalsky, A., Duffield, T., Allen, S.J., and Harbison, J., Appl. Phys. Lett. 52, 1320(1988).
[24] Byungsung, O., Choe, J.W., Francombe, M.H., Bandara, K.M.S.V. and Coon, D.D. Appl. Phys. Lett. 57,503(1990).
[25] Gunapala, S.D., Levine, B.F. and Chand, N., Appl. Phys. Lett. (1991).
[26] Yu, L.S., Li, S.S., and Kao, Y.C., unpublished
[27] Asom, M.T. and Leibenguth, R.E., unpublished
[28] Anderson, J.Y. and Landgren, G., Inst. Phys. Conf. Ser. No 106, 731 (1990).
[29] Stayt, J. Jr., unpublished
[30] Levine, B.F., Bethea, C.G., Hasnain, G., Chen, V.O., Pelve, E., Abott, R.R., and Hsieh, S.J., Appl. Phys. Lett. 56,851(1990).
[31] Gunapala, S.D., Levine, B.F., Pfeiffer, L.N. and West, K.W., Appl. Phys. Lett. (1990).
[32] Swaminathan, V. and Asom, M.T., unpublished
[33] Maezawa, K., Mizutani, T., Yanagawa, F., Jpn. J. Appl. Phys. 25,, L557(1986).
[34] Bethea, C.G., unpublished.
[35] Levine, B.F., Bethea, C.G., Hasnain, G., Walker, J., and Malik, R.J., Appl. Phys. Lett. 53,296(1988).

Related content

Powered by UNSILO

Epitaxial Structures For Optical Information Processing Applications: Superlattice Infrared Detectors

  • Moses T. Asom (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.