Hostname: page-component-7bb8b95d7b-s9k8s Total loading time: 0 Render date: 2024-09-27T18:04:29.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial lift-off of strontium titanate thin films and the temperature dependence of the low frequency dielectric properties of the films

Published online by Cambridge University Press:  10 February 2011

M. J. Dalberth ,
J. C. Price  and
C. T. Rogers
M. J. Dalberth
Affiliation:
University of Colorado-Boulder, Department of Physics, Boulder CO 80309-0390
J. C. Price
Affiliation:
University of Colorado-Boulder, Department of Physics, Boulder CO 80309-0390
C. T. Rogers
Affiliation:
University of Colorado-Boulder, Department of Physics, Boulder CO 80309-0390
Get access

Abstract

Using pulsed laser ablation, we have grown epitaxial bilayers of strontium titanate (STO) and yttrium barium copper oxide (YBCO) on lanthanum aluminate (LAO) and neodymium gallate (NGO) substrates. Using a selective acid etch, we have removed the YBCO from the middle of the bilayer and lifted off the strontium titanate films from their parent substrates. Using coplanar interdigital capacitors patterned on the films' surface, we have measured the dielectric constant and loss as a function of frequency and temperature and have resolved frequency dependent loss peaks which indicate thermally activated behavior. Also, by applying a dc bias to the capacitor, we have seen tuning of the lifted off films' dielectric constants that compares favorably to films attached to substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 371
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fleury, P. A., Worlock, J. M., Phys. Rev. B, 174, p. 613 (1968).Google Scholar
2. Uwe, H., Sakudo, T., Phys. Rev. B, 13, p. 271 (1976).Google Scholar
3. Yablonovitch, E., Hwang, D. M., Gmitter, T. J., Florez, L. T., and Harbison, J. P., Appl. Phys. Lett., 56, p. 2419 (1990).Google Scholar
4. Eddy, M. M., Hanson, R., Rao, M. R., Zuck, B., Speck, J. S., Tarsa, E. J., Mater. Res. Soc. Symp. Proc., 474, p. 365 (1997).Google Scholar
5. Dalberth, M. J., Stauber, R. E., Price, J. C., Rogers, C. T., Galt, D., Mater. Res. Soc. Symp. Proc., 474, p. 43 (1997).Google Scholar
6. Wu, H.-D., Barnes, F. S., Galt, D., Price, J. C., and Beall, J. A., “Dielectric properties of thin film SrTiO3 with YBa2CuO7-x electrodes,” SPIE International Symposium on Optoelectronic and Microwave Engineering, 2156, p. 131 (1994).Google Scholar
7. Interdigital capacitor conformai map from: Z. Zhang, private communication.Google Scholar
8. Dalberth, M. J., Stauber, R. E., Price, J. C., Rogers, C. T., Galt, D., Appl. Phys Lett, to be published.Google Scholar