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Epitaxial Layer Misorientation in CdTe on GaAs‡

Published online by Cambridge University Press:  25 February 2011

H. E. Inglefield ,
R. J. Matyi  and
R. Korenstein
H. E. Inglefield
Affiliation:
Dept. of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
R. J. Matyi
Affiliation:
Dept. of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706
R. Korenstein
Affiliation:
Raytheon Company, Research Division, Lexington, MA 02173
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Abstract

X-ray diffraction has been used to characterize the relative misorientation of [001] and [111] CdTe layers grown by hot-wall epitaxy on GaAs substrates. The magnitude of the misorientation of the CdTe epitaxial layer relative to the GaAs substrate depends on the magnitude of the miscut of the substrate; in addition, the [111] oriented CdTe exhibited significantly larger misorientations than did the [001] CdTe films. The azimuthal direction of the tilt of the epitaxial layer depends strongly on the nominal crystallographic orientation of the film. The [111] CdTe exhibited an azimuthal dependence of the tilt that is approximately coincident with the miscut of the substrate, while the azimuthal direction of tilt in the [001] CdTe layers differed from the substrate miscut direction by as much as 116°. These observations of epitaxial layer misorientation are discussed in terms of a dislocation model for layer tilt and azimuthal rotation in lattice-mismatched epitaxial systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 543
Copyright
Copyright © Materials Research Society 1991

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References

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