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Epitaxial IV-VI Semiconductor Films

  • T. K. Chu (a1) and A. Martinez (a2)

Abstract

Epitaxial films of IV-VI semiconductors and their alloys form the basis of an infrared detector technology that offers advantages in material stability as well as spectral versatility. These films are prepared by epitaxial hot-wall techniques and their material properties are essentially the same as those of bulk crystals. Because of their stability, multilayer growths of the materials can be achieved in a straight-forward manner. To date, multi-color detectors and small scale two-color detector arrays have been demonstrated successfully. A brief review of the growth method and the growth characteristics is given. Recent advances in superlattice research, especially those of interest to electro-optical devices, will be discussed. These include persistent photoconductivity and sub-bandgap optical transition.

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20. Chu, T. K., Agassi, D. and Martinez, A., to be published.
21. Santiago, F., Martinez, A., and Chu, T. K., Presented at the 33rd Symposium of the Am. Vac. Soc., Oct. 1983, to be published.

Epitaxial IV-VI Semiconductor Films

  • T. K. Chu (a1) and A. Martinez (a2)

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