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Epitaxial IV-VI Semiconductor Films

  • T. K. Chu (a1) and A. Martinez (a2)

Abstract

Epitaxial films of IV-VI semiconductors and their alloys form the basis of an infrared detector technology that offers advantages in material stability as well as spectral versatility. These films are prepared by epitaxial hot-wall techniques and their material properties are essentially the same as those of bulk crystals. Because of their stability, multilayer growths of the materials can be achieved in a straight-forward manner. To date, multi-color detectors and small scale two-color detector arrays have been demonstrated successfully. A brief review of the growth method and the growth characteristics is given. Recent advances in superlattice research, especially those of interest to electro-optical devices, will be discussed. These include persistent photoconductivity and sub-bandgap optical transition.

Copyright

COPYRIGHT: © Materials Research Society 1987

References

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Holloway, H. and Walpole, J. N., Prog. Crystal Growth Charact. 2 49 (1979).
Partin, D. L., Paper R2.4 Material Research Society Meeting, Dec. 1986.
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6. See, for example, Dalven, R., Solid-State Physics, 28 179, 1973, and G. Nimtz and B. Schlicht, in Narrow Band Semiconductors Springer Tracts in Modern Physics 98, (G. Höhler, Editor), Springer-Verag, New York 1983.
7. Weiser, K., Klein, K. A., and Ainhorn, M., Appl. Phys. Lett. 34 607 (1979).
8. Jensen, J. D. and Schoolar, R. B., J. Elect. Materials 7 239 (1978).
9. Hohnke, D. K. and Kaiser, S. W., J. Appl. Phys. 43 897 (1974).
10. Chu, T. K., Bouley, A. C. and Black, G. M., Proc.Intern. Soc. Opt. Eng. 409, 89 (1983).
11. -A7-Bouley, C., Chu, T. K. and Black, G. M., Proc. Intern. Soc. Opt. Eng. 285 26 (1981).
12. Bouley, A. C., Jensen, J. D., Black, G. M. and Foti, S., Proc. Intern. Soc. Opt. Eng. 246 2 (1980).
13. Maurer, W., Infrared Phys. 23 257 (1983).
14. Chu, T. K., Bouley, A. C. and Black, G. M., Proc. Intern. Soc. Opt. Eng. 285 33 (1981).
15. Duh, K. and Preier, H., Thin Solid Films 27 247 (1975).
16. See for example, Kinoshita, M. and Fujiyasu, H., J. Appl. Phys. 51 5845 (1980), and H. Clemens, E. J. Fantner and G. Bauer, Rev. Sci. Instrum. 54 685 (1983).
17. Partin, D. L., J. Vac. Sci. Tech. 21 1 (1982).
18. The Growth and Characterization were presented at the Meeting of The American Physical Society, Las Vegas, 1986. (Bull. Am. Phys. Soc. 31 522)
19. Martinez, A., Chu, T. K. and Allgaier, R. S., Proc. Intern. Conf.: Appl. of High Mag. Field in Semi. Phys. 1986, to be published.
20. Chu, T. K., Agassi, D. and Martinez, A., to be published.
21. Santiago, F., Martinez, A., and Chu, T. K., Presented at the 33rd Symposium of the Am. Vac. Soc., Oct. 1983, to be published.
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Epitaxial IV-VI Semiconductor Films

  • T. K. Chu (a1) and A. Martinez (a2)

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