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Epitaxial Island Growth and the Stranski-Krastanow Transition

  • A.G. Cullis (a1), D.J. Norris (a1), T. Walther (a2), M.A. Migliorato (a1) and M. Hopkinson (a1)...

Abstract

The way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat ‘wetting’ layer is examined in detail. Experimentally measured critical ‘wetting’ layer thicknesses for the InxGa1−xAs/GaAs system (x = 0.25 - 1) are demonstrated to show good agreement with values calculated using a segregation model. The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered to be important also for all other epitaxial systems exhibiting the transition.

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Epitaxial Island Growth and the Stranski-Krastanow Transition

  • A.G. Cullis (a1), D.J. Norris (a1), T. Walther (a2), M.A. Migliorato (a1) and M. Hopkinson (a1)...

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