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Epitaxial Growth of Transition Metal Silicides on Silicon

  • L. J. Chen (a1), H. C. Cheng (a1) and W. T. Lin (a1)

Abstract

Recent progresses in the epitaxial growth of refractory metal suicides, FeSi2 and manganese suicides on silicon are reviewed.

The formation and structures of epitaxial suicides are described. Factors affecting the suicide epitaxy are examined. The lattice match criteria for the growth of epitaxial suicides are assessed. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed. The properties and possible applications of epitaxial suicides are summarized. Prospects for the study of epitaxial suicides are addressed.

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