Skip to main content Accessibility help

Epitaxial Growth of Transition Metal Silicides on Silicon

  • L. J. Chen (a1), H. C. Cheng (a1) and W. T. Lin (a1)


Recent progresses in the epitaxial growth of refractory metal suicides, FeSi2 and manganese suicides on silicon are reviewed.

The formation and structures of epitaxial suicides are described. Factors affecting the suicide epitaxy are examined. The lattice match criteria for the growth of epitaxial suicides are assessed. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed. The properties and possible applications of epitaxial suicides are summarized. Prospects for the study of epitaxial suicides are addressed.



Hide All
1. Tu, K.N. and Mayer, J.W., in Thin Films — Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978), p. 359.
2. Nicolet, M.A. and Lau, S.S., in Materials and Process Characterization, edited by Einspruch, N.G. and Larrabee, G.B. (Academic, New York, 1983), p. 329.
3. Koster, U., Ho, P.S., and Lewis, J.E., J. Appl. Phys. 53, 7436 (1982).
4. Saitoh, S., Ishiwara, H., Asano, T., and Furukawa, S., Jpn. J. Appl. Phys. 20, 1649 (1981).
5. Furukawa, S. and Ishiwara, H., Jpn. J. Appl. Phys. Suppl. 22–1, 21 (1983).
6. Tung, R.T., Poate, J.M., Bean, J.C., Gibson, J.M., and Jacobson, D.C., Thin Solid Films, 93, 77 (1982).
7. Tung, R.T., Phys. Rev. Lett. 52, 461 (1984).
8. Saitoh, S., Ishiwara, H., and Furukawa, S., Appl. Phys. Lett. 37, 223 (1980).
9. Hensel, J.C., Levi, A.F.J., Tung, R.T., and Gibson, J.M., Appl. Phys. Lett. 47, 151 (1985).
10. Hikosaka, K., Ishiwara, H. and Furukawa, S., J. Vac. Sci. Technol. 16, 1913 (1979).
11. Harrison, T.R., Johnson, A.M., Tien, P.K., and Dayem, A.H., Appl. Phys. Lett. 41, 734 (1982).
12. Kawamu, T., Shinoda, D., and Muta, H., Appl. Phys. Lett. 11, 101 (1967).
13. Buckley, W.D. and Moss, S.C., Solid State Electron. 15, 1331 (1972).
14. Tu, K.N., Alessandrini, E.I., Chu, W.K., Kräutle, H., and Mayer, J.W., Jpn. J. Appl. Phys. 2, Suppl.2–1, 669 (1974).
15. van Gurp, G.J. and Langereis, C., J. Appl. Phys. 46, 4301 (1975).
16. Cheng, H.C., Chen, L.J., and Your, T.R., Mater. Res. Soc. Symp. Proc. 25, 441 (1984).
17. Cheng, H.C., Yew, T.R., and Chen, L.J., J. Appl. Phys. 57, 5246 (1985).
18. Cheng, H.C., Yew, T.R., and Chen, L.J., Appl. Phys. Lett. 47, 128 (1985).
19. Shiau, F.Y., Cheng, H.C. and Chen, L.J., Appl. Phys. Lett. 45, 524 (1984).
20. Chien, C.J., Cheng, H.C., Nieh, C.W., and Chen, L.J., J. Appl. Phys. 57, 1877 (1985).
21. Cheng, H.C., Chien, C.J., Shiau, F.Y., and Chen, L.J., Appl. of Surf. Sci. 22/23, 512 (1985).
22. Cheng, H.C. and Chen, L.J., Appl. Phys. Lett. 46, 562 (1985).
23. Lin, W.T. and Chen, L.J., Appl. Phys. Lett. 46, 1061 (1985).
24. Lin, W.T. and Chen, L.J., J. Appl. Phys. 58, 1515 (1985).
25. Fung, M.S., Cheng, H.C., and Chen, L.J., Appl. Phys. Lett. 47 (In Press).
26. Lian, Y.C. and Chen, L.J., Appl. Phys. Lett. 48 (In Press).
27. Chu, J.J., Chang, Y.S., and Chen, L.J., this proceedings.
28. Casey, J.J., Verderber, R.R., and Garnache, R.R., J. Electrochem. Soc. 114, 201 (1967).
29. Hashimoto, N. and Koga, Y., J. Electrochem. Soc. 114, 1189 (1967).
30. Perio, A., Torres, J., Bomchil, G., d'Avitaya, F.A., and Pantel, R., Appl. Phys. Lett. 45, 857 (1984).
31. Chang, C.S., Cheng, H.C., Cheng, J.Y., Guan, H., Lian, Y.C., Liang, J.M., Lin, W.T., Lu, S.W., Wu, I.C., and Chen, L.J., unpublished work.
32. Oura, K., Okada, S., and Hanawa, T., Proc. of the 8th Intern. Vacuum Congress, edited by Abeles, F. and Croset, J. (Cannes, France, 1981), p. 181.
33. Chen, L.J., Cheng, H.C., Lin, W.T., Chou, L.J., and Fung, M.S., Proc. Mat. Res. Soc. Symp. 37, 375 (1985).
34. Lin, W.T. and Chen, L.J., J. Appl. Phys. 59 (In Press).
35. d'Heurle, F.M., Petersson, C.S., and Tsai, M.Y., J. Appl. Phys. 51, 5976 (1980).
36. Markov, I. and Milchev, A., Surface Sci. 136, 519 (1984).
37. Murarka, S.P., J. Vac. Sci. Technol. 17, 775 (1980).
38. Zur, A., McGill, T.C., and Nicolet, M.A., J. Appl. Phys. 57, 600 (1985).
39. Hung, L.S., Lau, S.S., Von Alimén, M., Mayer, J.W., Ullrich, B.M., Baker, J.E., Williams, P., and Tseng, W.F., Appl. Phys. Lett. 37, 909 (1980).
40. Foti, G., Bean, J.C., Poate, J.M., and Magee, C.W., Appl. Phys. Lett. 36, 840 (1980).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed