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Epitaxial Growth of TbSi2 on Si(111)

Published online by Cambridge University Press:  28 February 2011

F.H. Kaatz ,
W.R. Graham  and
J. Van der Spiegel
F.H. Kaatz
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia PA 19104-6202
W.R. Graham
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia PA 19104-6202
J. Van der Spiegel
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia PA 19104-6202
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Abstract

We describe the epitaxial growth of TbSi2. In this study, terbium metal is evaporated onto (111) silicon and annealed to form terbium suicide, where the pressure during all procedures is maintained below 5×10-10 Torn The interdiffusion of terbium with silicon occurs at room temperature as determined by in-situ Auger electron spectroscopy. Low energy electron diffraction shows a sharp pattern of the hexagonal suicide after an 850°C anneal. Rutherford backscattering analysis indicates single-crystal growth with a channeling minimum yield of 7–8% for 120Å thick suicide films annealed to 800–900°C. These metal reacted films have pinholes with an average size of less than 0.5 µm and a fault structure along (220) silicon. Electrical measurements show metallic conduction with a room temperature resistivity of 110 µΩ-cm and evidence of magnetic ordering at 38K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 293
Copyright
Copyright © Materials Research Society 1990

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