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Epitaxial Growth of Silicon on CoSi2 (001)/Si (001)

Published online by Cambridge University Press:  22 February 2011

Q. F. Xiao ,
J. R. Jimenez ,
L. J. Schowalter ,
L. Luo ,
T. E. Mitchell  and
W. M. Gibson
Q. F. Xiao
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222 Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J. R. Jimenez
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180 Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 121.80
L. J. Schowalter
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180 Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 121.80
L. Luo
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, NM 87545
T. E. Mitchell
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, NM 87545
W. M. Gibson
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
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Abstract

Epitaxial Si layers have been grown under a variety of growth conditions on CoSi2 (001) by molecular beam epitaxy (MBE). The structural properties of the Si overgrowth were studied by in-situ Reflection High Energy Electron Diffraction (RHEED), as well as ex-situ MeV4He+ ion channeling and High Resolution Transmission Electron Microscopy (HRTEM). Strong influences of the CoSi2 surface reconstruction on the Si overgrowth have been observed. RHEED studies show islanding growth of Si on the CoSi2 (001) (3/√2 × √2)R45 reconstructed surface, but smooth growth of Si on the CoSi2 (001) {√2 × √2)R45 reconstructed surface, under the same growth conditions. The growth of Si on thin layers of CoSi2 (2nm-6nm) with (√2 × √2)R45 reconstructed surface at 460°C results in high crystalline quality for the Si top layer, as indicated by good channeling minimum yield (Xmin < 6%), but cross-sectional TEM shows that the CoSi2 layers are discontinuous. We also report preliminary results on Si grown on a 2 × 2 reconstructed CoSi2 (001) surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 519
Copyright
Copyright © Materials Research Society 1991

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References

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