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Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  25 February 2011

K. S. Grabowski ,
R. A. Kant  and
S. B. Qadr
K. S. Grabowski
Affiliation:
Naval Research Laboratory, Code 4670, Washington, DC 20375
R. A. Kant
Affiliation:
Naval Research Laboratory, Code 4670, Washington, DC 20375
S. B. Qadr
Affiliation:
Sachs/Freeman Associates, Inc., Landover, MD 20785
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Abstract

Epitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 279
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Jonker, B.T., Krebs, J.J., and Prinz, G.A., J. Appl. Phys. 64, 5340 (1988).10.1063/1.342364CrossRefGoogle Scholar
2. Pavlidis, P., Thin Solid Films 42, 221 (1977).10.1016/0040-6090(77)90420-5CrossRefGoogle Scholar
3. Sparks, C.J., Hasaka, M., Easton, D.S., Baik, S., Habenschuss, T., and Ice, G.E. in Interfaces. Superlattices, and Thin Films, edited by Dow, J.D. and Schuller, I.K. (Mater. Res. Soc. Proc. 77, Pittsburgh, PA 1987) pp. 495–502.Google Scholar
4. Egert, B., Kirstein, W., Kessler, J., and Thieme, F., Thin Solid Films 50, L7 (1978).10.1016/0040-6090(78)90128-1CrossRefGoogle Scholar
5. Grunbaum, Enrique in Epitaxial Growth, Part B, edited by Matthews, J.W. (Academic Press, New York, 1975) pp. 611–674.10.1016/B978-0-12-480902-4.50012-4CrossRefGoogle Scholar
6. Tu, K.N. and Mayer, J.W. in Thin Films, Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978) pp.359–405.Google Scholar
7. Tu, K.N., Alessandrini, E.I., Chu, W.K., Krautle, H., and Mayer, J.W., Jap. J. Appl. Phys., Suppl. 2 Pt. 1, 669 (1974).10.7567/JJAPS.2S1.669CrossRefGoogle Scholar
8. Greene, J.E., CRC Critical Reviews in Solid State and Materials Sciences 11, 47 (1983).10.1080/01611598308243645CrossRefGoogle Scholar
9. Smidt, F.A., presented at the NATO Advanced Study Institute on Structure-Property Relations in Ion-Beam Surface Modified Ceramics Theory and Practice, Il Ciocco, Italy, 1988, (to be published).Google Scholar
10. Ohmi, T., Saito, T., Shibata, T., and Nitta, T., Appl. Phys. Lett. 52, 2236 (1988).10.1063/1.99542CrossRefGoogle Scholar
11. Dobrev, D., Thin Solid Films 92, 41 (1982).10.1016/0040-6090(82)90186-9CrossRefGoogle Scholar
12. Wang, P., Thompson, D.A., and Smeltzer, W.W., Nucl. Instrum. Meth. B7/8, 97 (1985); B16, 288 (1986).10.1016/0168-583X(85)90536-1CrossRefGoogle Scholar
13. Biersack, J.P. and Haggmark, L.G., Nucl. Instrum. Meth. 174, 257 (1980).10.1016/0029-554X(80)90440-1CrossRefGoogle Scholar
14. Yu, L.S., Harper, J.M.E., Cuomo, J.J., and Smith, D.A., J. Vac. Sci. Technol. A4, 443 (1986); Appl. Phys. Lett. 47, 932 (1985).10.1116/1.573902CrossRefGoogle Scholar
15. Andoh, Y., Ogata, K., Yamaki, H., and Sakai, S., presented at the Ion Beam Modification of Materials Conference, Tokyo, Japan, 1988; M. Kiuchi, K. Fujii, T. Tanaka, M. Satou, and F. Fujimoto, Nucl. Instrum. Meth. B33, 649 (1988).Google Scholar
16. Nagai, Y., Tago, A., and Toshima, T., J. Vac. Sci. Technol. A5, 61 (1987).10.1116/1.574138CrossRefGoogle Scholar