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Epitaxial Growth of LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Semiconductor/Ferroelectric/Conductor Heterostructures

  • Woong Choi (a1) and Tim Sands (a1)

Abstract

The feasibility of using LaVO3 as a semiconducting layer in all-oxide semiconductor/ferroelectric/conductor heterostructures was explored by growing epitaxial LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 heterostructures on (001) LaAlO3 single crystal substrates by pulsed laser deposition. A high degree of c-axis orientation and strong in-plane texture revealed by x-ray diffraction indicated the epitaxial crystallographic relationships between the layers. With a 30 nm layer of (Ba,Sr)TiO3, the heterostructure showed optimal ferroelectric hysteresis with remanent polarizations over 30 C/cm2. The capacitance measurement as a function of voltage might reveal the modulation of the depletion layer in the semiconducting LaVO3.

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Epitaxial Growth of LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Semiconductor/Ferroelectric/Conductor Heterostructures

  • Woong Choi (a1) and Tim Sands (a1)

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