Skip to main content Accessibility help

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

  • K. Nashimoto (a1) (a2), D. K. Fork (a1) (a3), F. A. Ponce (a1) and T. H. Geballe (a3)


Epitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.



Hide All
1. Adachi, H., Kawaguchi, T., Kitabatake, M., and Wasa, K., Jpn. J. Appl. Phys. 22, suppl. 22-2, 11 (1983).
2. Ameen, M. S., Graettinger, T. M., Rou, S. H., Al-Shareef, H. N., Gfford, K. D., Auchiello, O., and Kingon, A. I., Mat. Res. Soc. Symp. Proc. 200, 65 (1990).
3. Ramesh, R., Luther, K., Wilkins, B., Hart, D. L., Wang, E., and Tarascon, J. M., Inam, A., Wu, X. D., and Venkatesan, T., Appl. Phys. Lett. 57, 1505 (1990).
4. Keijser, M. de, Dormans, G. J., Cillessen, J. F., Leeuw, D. M. de, and Zandbergen, H. W., Appl. Phys. Lett. 58, 2636 (1991).
5. Nashimoto, K. and Cima, M. J., Mater. Lett. 10, 348 (1991).
6. Fork, D. K., Nashimoto, K., and Geballe, T. H., Appl. Phys. Lett. 60, 1621 (1992).
7. Tsao, J. Y., Brennan, T. M., Klein, J. F., and Hammons, B. E., J. Vac. Sci. Technol. A7, 2138 (1989).
8. Ishida, M., Tsuji, S., Kimura, K., Matsunaga, H., and Tanaka, T., J. Cryst. Growth, 45, 393 (1978).
9. Mikami, M., Hokari, Y., Egami, K., Tsuya, H., and Kanamori, M., Proceedings of 15th Conference on Solid State Devices and Materials, Tokyo, 31, (1983).
10. Fukumoto, H., Imura, T., and Osaka, Y., Jpn. J. Appl. Phys. 27, L1401 (1988).
11. Inoue, T., Yamamoto, Y., Koyama, S., Suzuki, S., and Ueda, Y., Appl. Phys. Let. 56, 1332 (1990).
12. Fork, D. K., Ponce, F. A., Tramontana, J. C., and Geballe, T. H., Appl. Phys. Lett. 58, 2294(1991).
13. Nashimoto, K., Fork, D. K., and Geballe, T. H., Appl. Phys. Lett. 60, 1199 (1992).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed