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The Epitaxial Growth of Copper on the (111) Surface of Silicon

Published online by Cambridge University Press:  21 February 2011

F. J. Walker ,
J. R. Conner  and
R. A. Mckee
F. J. Walker
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831–6118
J. R. Conner
Affiliation:
Cornell University, Ithaca, NY
R. A. Mckee
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831–6118
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Abstract

The progression of the epitaxy of Cu(111) on Si(111) has been studied using surface sensitive techniques and the as-grown film studied using high resolution transmission electron microscopy (HRTEM). A molecular beam epitaxy (MBE) system has been used to deposit films on 3-inch-diameter silicon substrates. Across this large area a graded thickness of 0 to 10 nm of copper was deposited and scanned using Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). For films grown at 373 K, silicon alloys with the copper up to a thickness of 5.0 rim. LEED indicates an ordered R30°-√3×√3 Cu(111) surface which results from the alloying of copper and silicon. HRTEM images from the interface region show the alloy to be 2.3 nm thick, crystalline, and epitaxial to the Si(111) surface. There are indications that the interface alloy may be a metastable copper silicide. This alloy is important in the mechanism for the growth of Cu(111) on Si(111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 249
Copyright
Copyright © Materials Research Society 1990

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