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Epitaxial Growth of Bi2Sr2CuO6 Thin Films on Single Crystal Surfaces.

  • Takuya Matsumoto (a1), Tomoji Kawai (a1) and Shichio Kawai (a1)

Abstract

Epitaxial growth of Bi2Sr2CuO6 thin films on a SrTiO3, a misoriented SrTiO3 and a Bi2Sr2CaCu2O8 single crystal have been performed using computer-controlled laser molecular beam epitaxy. On the SrTiO3 substrate, the 2201 films consist of two types of domains whose b-axes are perpendicular to each other. In contrast, the 2201 film on the 2212 single crystal has a complete single type of domains. Layer-by-layer growth with a half unit cell thickness of 2201 films is observed.

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1. Shigaki, I., Kitahama, K., Shibutani, K., Hayashi, S., Ogawa, R., Kawate, Y., Kawai, T., Kawai, S., Matsumoto, M. and Shirafujl, J., Jpn. J. Appl. Phys, 29, L2013 (1990).
2. Gao, Y., Lee, P., Coppens, P., Subramanian, M.A. and Sleight, A.W., Science 241, 954 (1988):
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Yamamoto, A., Onoda, M., Muromachi, E.T., Izumi, F., Ishigaki, T. and Asano, H., Phys. Rev. B 42, 4228 (1990).
3. Matsumoto, T., Kawai, T., Kitahama, K., Kawai, S., Shigaki, I. and Kawate, Y., Appl. Phys. Lett. 58, 2039 (1991).

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