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Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

J. E. Cosgrove
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
P. A. Rosenthal
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
D. Hamblen
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
D. B. Fenner
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
C. Yang
Affiliation:
Santa Clara University, Santa Clara, CA
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Abstract

We have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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