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Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

J. E. Cosgrove ,
P. A. Rosenthal ,
D. Hamblen ,
D. B. Fenner  and
C. Yang
J. E. Cosgrove
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
P. A. Rosenthal
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
D. Hamblen
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
D. B. Fenner
Affiliation:
Advanced Fuel Research, Inc, East Hartford, CT
C. Yang
Affiliation:
Santa Clara University, Santa Clara, CA
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Abstract

We have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 345
Copyright
Copyright © Materials Research Society 1996

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