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Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

  • Kensuke Akiyama (a1), Hiroshi Funakubo (a2) and Masaru Itakura (a3)

Abstract

High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

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Keywords

Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

  • Kensuke Akiyama (a1), Hiroshi Funakubo (a2) and Masaru Itakura (a3)

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