Hostname: page-component-7bb8b95d7b-l4ctd Total loading time: 0 Render date: 2024-09-24T13:38:17.896Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

Published online by Cambridge University Press:  20 March 2013

Kensuke Akiyama ,
Hiroshi Funakubo  and
Masaru Itakura
Kensuke Akiyama
Affiliation:
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Masaru Itakura
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
Get access

Abstract

High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

Keywords

thin filmsemiconductingepitaxy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1493: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids , 2013 , pp. 189 - 194
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Leong, D., Harry, M., Reeson, K.J. and Homewood, K.P., Nature 387, 686 (1997).CrossRefGoogle Scholar
Samsonov, G. V. and Vinitskii, I. M., “Handbook of Refractory Compounds” IFI/Plenum, New York, 1980.CrossRefGoogle Scholar
Dusausoy, Y., Protas, J., Wandji, R. and Roques, B., Acta Crystallogr. B 27, 1209 (1971).CrossRefGoogle Scholar
Mahan, J.E., Le Thanh, V., Chevrier, J., Berbezier, I., Derrien, J. and Long, R. G., J. Appl. Phys. 74, 1747 (1993).CrossRefGoogle Scholar
Cherief, N., ’Anterroches, C.D., Cinti, R.C, Nguyen Tan, T.A. and Derrien, J., Appl. Phys. Lett. 55, 1671 (1989).CrossRefGoogle Scholar
Akiyama, K., Kaneko, S., Kiguchi, T., Suemasu, T., Kimura, T. and Funakubo, H., Materials Research Society Symposium Proceedings 980, II05–47 (2007).Google Scholar
Akiyama, K., Kaneko, S., Yokomizo, K. and Itakura, M., Appl. Surf. Sci., 256 1244 (2009).CrossRefGoogle Scholar
Akiyama, K., Ohya, S. and Funakubo, H., Thin Solid Films 461, 40 (2004).CrossRefGoogle Scholar
Akiyama, K., Ohya, S., Konuma, S., Numata, K. and Funakubo, H., J. Cryst. Growth 237–239, 1951 (2002).CrossRefGoogle Scholar
Akiyama, K., Itakura, M., Kaneko, S., Funakubo, H. and Maeda, Y., Thin Solid Films, 515, 8144 (2007).CrossRefGoogle Scholar
Akiyama, K., Kimura, T., Suemasu, T., Hasegawa, F., Maeda, Y. and Funakubo, H., Jpn. J. Appl. Phys. Lett. 43, L551 (2004).CrossRefGoogle Scholar
Kimura, T., Akiyama, K., Watanabe, T., Saito, K. and Funakubo, H., Jpn. J. Appl. Phys. 42, 4943 (2003).CrossRefGoogle Scholar
Hunt, T. D., Reeson, K. J., Gwilliam, R. M., Homewood, K. P., Wilson, R. J. and Sealy, B. J., J. Lumin. 57, 25 (1993).CrossRefGoogle Scholar
Martinelli, L., Grilli, E., Migas, D. B., Miglio, L., Marabelli, F., Soci, C., Geddo, M., Grimaldi, M. G. and Spinella, C., Phys. Rev. B 66, 085320 (2002).CrossRefGoogle Scholar
Maeda, Y., Terai, Y., Itakura, M. and Kuwano, N., Thin Solid Films 461, 160 (2004).CrossRefGoogle Scholar
Noda, K., Terai, Y., Hashimoto, S., Yoneda, K. and Fujiwara, Y., Appl. Phys. Lett. 94, 241907 (2009).CrossRefGoogle Scholar