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Epitaxial Growth and Physical Properties of La1-xCaxMnO3-δ Thin Films on MgO(001) Substrates

Published online by Cambridge University Press:  15 February 2011

J. Y. Gu
Affiliation:
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151–742, Korea
K. H. Kim
Affiliation:
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151–742, Korea
T. W. NOH
Affiliation:
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151–742, Korea
Jeong Soo Lee
Affiliation:
LG Electronics Research Center, 16 Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Young Woo Jeong
Affiliation:
LG Electronics Research Center, 16 Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
W. Jo
Affiliation:
LG Electronics Research Center, 16 Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
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Abstract

Perovskite La1-xCaxMnO3-δ (LCMO) thin films with a wide range of x, i.e., 0.0 ≤ x ≤ 0.6, were deposited on MgO(001) substrates using a pulsed laser deposition (PLD) technique. Epitaxial La0.7Ca0.3MnO3-δ/MgO thin films were able to be grown under a condition such as 1.5 ∼ 2.1 J/cm2 of a laser fluence, 650 ∼ 750 °C of a substrate temperature, and 100 ∼ 300 mtorr of an oxygen pressure. X-ray pole figures and electron diffraction pattern showed that the LCMO films were grown epitaxially on MgO(001). Rutherford Backscattering Spectroscopy measurements investigated that the epitaxial LCMO films have compositions similar to those of targets, demonstrating the PLD is a useful technique to get films with complicated chemical compositions. Various physical properties, including resistance, R, magnetoresistance, ΔR/R(H=0) ≡ (R(H)-R(0))/R(O), and magnetization, M(T), were measured. The LCMO thin films with 0.2 ≤ x ≤ 0.5 had both semiconductor-metal and ferromagnetic ordering transitions, whose temperatures are located close to each other. These physical properties were explained in terms of the magnetic polaron model.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. Jin, S., Tiefel, T. H., McCormack, M., Fastnacht, R. A., Ramesh, R., and Chen, L. H., Science 264, 413 (1994).Google Scholar
2. McCormack, M., Jin, S., Tiefel, T. H., Fleming, R. M., Phillips, J. M., and Ramesh, R., AppL Phys. Lett. 64, 3045 (1994).Google Scholar
3. Helmolt, R. von, Wecker, J., Holzopfel, B., Schultz, L., and Samwer, K., Phys. Rev. Lett. 71, 2331 (1993).Google Scholar
4. Ju, H. L., Kwon, C., Li, Q., Greene, R. L., and Venkatesan, T., AppL Phys. Lett. 65, 2108 (1994).Google Scholar
5. Xiong, G. C., Li, Q., Ju, H. L., Mao, S. N., Senapati, L., Xi, X. X., Greene, R. L., and Venkatesan, T., Appl. Phys. Lett. 66, 1427 (1995).Google Scholar
6. Mahendiran, R., Raychaudhuri, A. K., Chainai, A., Sarma, D. D., and roy, S. B., Appl. Phys. Lett. 66, 233 (1995).Google Scholar
7. Gu, J. Y., Kim, K. H., Noh, T. W., and Suh, K-S., J. Appl. Phys. (to be published)(1995).Google Scholar
8. Jonker, G. H. and Santen, J. H. van, Physica 16, 337 (1950).Google Scholar
9. Kuster, R. M., Singlanton, D. A., Macgreevy, R., and Hayes, W., Physica (Amsterdam) 155B, 362 (1989).Google Scholar
10. Manoharen, S. S., Vasanthacharya, N. Y., Hegde, M. S., Satyalakshmim, K. M., Prasrd, V., and Subramanyam, S. V., J. Appl. Phys. 76, 3923 (1994).Google Scholar
11. Gu, J. Y., Kim, K. H., Noh, T. W., Koh, G. H., and Khim, Z. G., J. Kor. Phys. Soc. 28, 348 (1995).Google Scholar
12. Tsuda, N., Nasu, K., Yanase, A., and Siratori, K., Electronic Conduction in Oxides (Springer- Verlag, Berlin, Heidelberg, 1991).Google Scholar
13. Millis, A. J., Littlewood, P. B., an Shraiman, dB. I., Phys. Rev. Lett. 74, 5144 (1995).Google Scholar
14. Ibarra, M. R., Algarabel, P. A., Marquina, C., Blasco, J., and Gatcia, J., Phys. Rev. Lett. 75, 3541 (1995).Google Scholar
15. Kim, K. H., Gu, J. Y., Choi, H. S., and Noh, T. W., (unpublished).Google Scholar