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Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

  • Takashi Suemasu (a1), Cheng Li (a1), Tsuyoshi Sunohara (a2), Yuta Ugajin (a3), Ken'ichi Kobayashi (a4), Shigemitsu Murase (a5) and Fumio Hasegawa (a6)...

Abstract

We have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.

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Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

  • Takashi Suemasu (a1), Cheng Li (a1), Tsuyoshi Sunohara (a2), Yuta Ugajin (a3), Ken'ichi Kobayashi (a4), Shigemitsu Murase (a5) and Fumio Hasegawa (a6)...

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