Skip to main content Accessibility help
×
Home

Epitaxial Growth and Characterization of SiC on Different Orientations

  • Larry B. Rowland (a1), Canhua Li (a2), Greg T. Dunne (a3) and Jody A. Fronheiser (a4)

Abstract

Background doping as well as intentional doping using nitrogen and trimethylaluminum have been investigated for 4H-SiC epitaxy on offcut Si face, C face, and a-axis substrates over a wide range of C:Si ratio. Smooth morphology can be obtained at a C:Si ratio of 2.0 on a-axis substrates but not on Si or C face material. Background doping levels of <1 × 1015 cm-3 were achieved on a-axis and Si face material. Nitrogen incorporated much more efficiently on C face and a-axis as compared to Si face. Aluminum incorporated most efficiently on Si face and least efficiently on C face. Both of the above dopant incorporation trends were most pronounced at high C:Si ratios and were small or virtually absent at low C:Si ratios.

Copyright

References

Hide All
1. Pearce, C. W., in VLSI Technology (ed. Sze, S. M., McGraw-Hill: New York, 1983), pp. 950.
2. Buczko, R., Pennycook, S. J., and Pantelides, S. T., Phys. Rev. Lett. 84, 943946 (2000).
3. Hallin, C., Ellison, A., Ivanov, I. G., Henry, A., Son, N.T., and Janzén, E., Mater. Sci. Forum 264–268, 123126, (1998).
4 Wada, K., Kimoto, T., Mishikawa, K., and Matsunami, H., Mater. Sci. Forum 483–485, 8588 (2005).
5. Rowland, L.B., Burk, A. A. Jr, and Brandt, C. D., presented at 39th Electronic Materials Conference, Boulder, CO, June 1997.
6 Blanc, C., Sartel, C., Soulière, V., Juillaguet, S., Monteil, Y., and Camassel, J., Mater. Sci. Forum 457–460, 237240 (2004).
7 Forsberg, U., Danielsson, Ö., Henry, A., Linnarsson, M. K. and Janzén, E., J. Cryst. Growth 236, 101112 (2001).
8 Kojima, K., Kuroda, S., Okumura, H., Arai, K., Microelectron. Eng. 83, 7981 (2006).
9 Blanc, C., Zielinski, M., Soulière, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., and Monteil, Y., Mater. Sci. Forum 483–485, 117120 (2005).
10 Konstantinov, A.O., Hallin, C., Pécz, B., Kordina, O., and Janzén, E., J. Cryst. Growth 178, 495504 (1997).
11 Kimoto, T. and Matsunami, H., J. Appl. Phys. 78, 3132–37 (1995).
12 Burk, A. A. Jr, and Rowland, L. B., Phys. Stat. Sol. (b) 202, 263–79 (1997).
13 Kimoto, T., Yano, H., Negoro, Y., Hashimoto, K., and Matsunami, H., in Silicon Carbide: Recent Major Advances (eds. Choyke, W.J., Matsunami, H., and Pensl, G., Springer-Verlag: Berlin, 2004), pp. 711733.
14 Kimoto, T., Itoh, A., and Matsunami, H., Appl. Phys. Lett. 67, 2385–87 (1995).
15 Larkin, D. J., Neudeck, P. G., Powell, J. A., and Matus, L. G., Appl. Phys. Lett. 65, 1659–61 (1994).

Keywords

Epitaxial Growth and Characterization of SiC on Different Orientations

  • Larry B. Rowland (a1), Canhua Li (a2), Greg T. Dunne (a3) and Jody A. Fronheiser (a4)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed