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Epitaxial Growth and Characterization of SiC on Different Orientations

  • Larry B. Rowland (a1), Canhua Li (a2), Greg T. Dunne (a3) and Jody A. Fronheiser (a4)


Background doping as well as intentional doping using nitrogen and trimethylaluminum have been investigated for 4H-SiC epitaxy on offcut Si face, C face, and a-axis substrates over a wide range of C:Si ratio. Smooth morphology can be obtained at a C:Si ratio of 2.0 on a-axis substrates but not on Si or C face material. Background doping levels of <1 × 1015 cm-3 were achieved on a-axis and Si face material. Nitrogen incorporated much more efficiently on C face and a-axis as compared to Si face. Aluminum incorporated most efficiently on Si face and least efficiently on C face. Both of the above dopant incorporation trends were most pronounced at high C:Si ratios and were small or virtually absent at low C:Si ratios.



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Epitaxial Growth and Characterization of SiC on Different Orientations

  • Larry B. Rowland (a1), Canhua Li (a2), Greg T. Dunne (a3) and Jody A. Fronheiser (a4)


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