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Epitaxial Films of Germanium by MOCVD

Published online by Cambridge University Press:  26 February 2011

Altaf H. Khan  and
Jorge J. Santiago
Altaf H. Khan
Affiliation:
Center for Sensor Technologies, The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104–6390
Jorge J. Santiago
Affiliation:
Center for Sensor Technologies, The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104–6390
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Abstract

A simple and easily expandable atmospheric pressure MOCVD (metal organic chemical vapor deposition) reactor for the growth of germanium films is proposed and implemented. It employs a resistively heated horizontal quartz reaction chamber. The organometallic compound tetramethylgermanium (TMGe) is used as the germanium source, and hydrogen as the carrier gas. Using this reactor, epitaxial films of germanium on <111> germanium substrates were grown at 550-650°C. The growth rate was found to increase with temperature. The single crystallinity of these films was evaluated by x-ray rocking curves, and the interface strain between the film and substrate was found to be less than 1%. These Ge/Ge samples have the same morphology as the bare substrate and their sheet resistance is 30% higher than the bare substrate value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 279
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Mullin, J. and Irvine, S., J. Cryst. Growth, 68, 214 (1984).Google Scholar
2.Cockayne, B. and Wright, P., J. Cryst. Growth, 68, 223 (1984).Google Scholar
3.Stringfellow, G., in Semiconductors and Semimetals, vol.22, part A, edited by Tsang, W., (Academic, New York, 1985), p. 209.Google Scholar
4.Ludowise, M., J. Appl. Phys., 58, R31 (1985).Google Scholar
5.Tunnicliffe, J., Irvine, S., Dosser, O., and Mullin, J., J. Cryst. Growth, 68, 237 (1984).Google Scholar
6.People, R., IEEE J. Quantum Electronics, OE–22, 1696 (1986).Google Scholar
7.Robert, M., Fletcher, D., Wagner, K., and Ballantyne, J., Appl. Phys. Lett., 44, 967 (1984).Google Scholar
8.Yablokov, B., Dosorov, A., Fetchenko, I., Zorin, A., Zhurnal Obshchei Khimii, 53, 126 (1983).Google Scholar
9. See Fig. 7f in Avigal, Y., Itzhak, D., Schieber, M., J. Electrochem.Soc., 122, 1226 (1975).Google Scholar
10.Heavens, O., Thin Film Physics, (Methuen, London, 1970).Google Scholar
11.Klug, H. and Alexander, L., X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, 2nd ed., (Wiley, New York, 1974).Google Scholar