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Enhancement of the Amorphous to Microcrystalline Phase Transition in Silicon Films Deposited by Sif4-H2-He Plasmas

  • G. Cicalai (a1), M. Losurdo (a1), P. Capezzuto (a1), G. Bruno (a1), T. Ligonzo (a2), L. Schiavulli (a2), C. Minarini (a3) and M. C. Rossi (a4)...

Abstract

Hydrogenated microcrystalline silicon (μc-Si:H) thin films have been obtained by plasma decomposition of SiF4-H2-He mixtures at low temperature (120 °C). The size of crystalline grain and their volume fraction with respect to the amorphous phase have been found dependent on the r.f. power as evaluated by grazing incidence X-ray diffraction, microRaman and ellipsometry measurements. Chemical and electrical properties change according to the microcrystallinity. Pure and/or highly microcrystalline silicon has been obtained at temperature and r.f. power as low as 120 °C and 15 Watt.

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Enhancement of the Amorphous to Microcrystalline Phase Transition in Silicon Films Deposited by Sif4-H2-He Plasmas

  • G. Cicalai (a1), M. Losurdo (a1), P. Capezzuto (a1), G. Bruno (a1), T. Ligonzo (a2), L. Schiavulli (a2), C. Minarini (a3) and M. C. Rossi (a4)...

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