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Enhancement of STT-RAM Characteristics by Wet Clean Treatment after MTJ Etch Process

  • Jung Nam Kim (a1), Choon Kun Ryu (a1), Hong Ju Suh (a1), Bo Kyung Jung (a1), Soon Ju Lee (a1), Chang Hyup Shin (a1), Won Joon Choi (a1), Jae Sung Roh (a1) and Sung Ki Park (a1)...

Abstract

The effect of wet chemical treatment on the magnetic tunneling junction (MTJ) was examined. The tunneling magneto-resistance (TMR) increased and the resistance of anti-parallel state and parallel state decreased when a wet cleaning treatment was carried out after a reactive ion etching process. Furthermore, the exfoliation between the capping layer and Inter layer Dielectric (ILD) was prevented. Presumably, these were due to the elimination of the damaged layer and the residues. This investigation showed that the wet treatment after the MTJ patterning using RIE process could improve the MTJ properties without degradation of Hc, such as TMR and R low .

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1. Daughton, J.M, Thin Solid Films, 216, 162168 (1992)10.1016/0040-6090(92)90888-I
2. Song, Y.S., Electrochem. Solid-State Lett., 7, C64 (2004)10.1149/1.1652423
3. Kinisguta, K., Jpn. J. Appl. Phys. 49,08JB02 (2010)

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