We report evidence of enhancement in ferroelectricity in thin films of vanadium (V) doped ZnO grown at higher oxygen pressure. This process reduces oxygen deficiency and the material becomes very insulating, which in turn lowers the leakage current through the ferroelectric capacitor. 2 at. % V doped ZnO films, with thickness of approximately 1 μm were grown epitaxially on c-cut sapphire (Al2O3) (0001) at a growth temperature of 600°C. X-ray analysis showed the layers to be epitaxial where the (0002) diffraction peak had a rocking curve FWHM below 1°. The films with higher oxygen pressure were more insulating than the one grown with lower oxygen pressure. The saturation polarization doubled when the growth pressure increased from 300 mT to 500 mT. Time gated ICCD imaging of the ablated plasma during various O2 pressures and how it translated to the film quality are presented.