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Enhanced Rate of SIO2 Growth in Ge-Implanted SI*

  • D. Fathy (a1), C. W. White (a1) and O. W. Holland (a1)

Abstract

The implantation of Ge in Si has been found to considerably increase the steam oxidation rate of Si under certain conditions. This effect has been studied for a range of implanted ion energies and doses. During steam oxidation, implanted Ge is rejected from the growing oxide and forms a thin layer between SiO2 and Si. Segregated Ge is epitaxial with the underlying Si, and leads to enhanced oxidation of the underlying Si. Evidence suggests that the Ge alters the interfacial kinetics associated with oxide formation.

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Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

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References

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1. Grove, A.S., Leisliko, O. Jr., and Sah, C.T., J. Appl. Phys. 35, 2695 (1984).
2. Francis, R. and Dobson, P.S., J. Appl. Phys. 50, 280 (1979).
3. Gotzlich, J.F., Harberger, K., Ryseel, H., Kranz, H., and Traumuler, E., Radiat. Eff. 47, 203 (1980).
4. Mezey, G., Nagy, T., Gyulai, J., Kotai, E., Manuaba, A., and Lohner, T., p. 49 in Ion Implantation in Semiconductors, ed. by Chernow, F., Borders, J.A., and Brice, D.K., Plenum Press (1976).
5. Krivanek, O.L., Tsui, D.C., Sheng, T.T., and Kamgar, A., p. 357 in Proc. of Int. Topical Conf. on Physics of SiO2 and Its Interfaces, ed. by Pantelides, S.F., Pergamon, New York (1978).
6. Ravindra, N.M., Fathy, D., Narayan, J., Srivastava, J.K., and Irene, E.A., Mat. Lett. 4,8,9, 337 (1986).

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